Topography change due to multilayer oxidation at SiO2/Si(111) interfaces

Daisuke Hojo; Hitoshi Oeda; Norio Tokuda; Kikuo Yamabe

doi:10.1143/jjap.42.1903

Topography change due to multilayer oxidation at SiO₂/Si(111) interfaces

Daisuke Hojo, Hitoshi Oeda, Norio Tokuda, Kikuo Yamabe

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

Using a Si(111) surface with atomistically flat wide terraces, topography change of the SiO₂/Si interfaces during thermal oxidation was investigated by means of atomic force microscopy. We observed vestiges of oxidation at the interfaces of SiO₂ films with various thicknesses at three different temperatures. We found that the SiO₂/Si interface consisted of at least three layers over the entire range of our experiments. This result indicates that layer-by-layer oxidation does not progress at the SiO₂/Si interfaces strictly. The densities of vestiges get increased as the oxidation temperature decreased. This topographic change arises from the different temperature dependence between two oxidation rates in parallel and perpendicular to the SiO₂/Si interface.

Original language	English
Pages (from-to)	1903-1906
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	42
Issue number	4 B
DOIs	https://doi.org/10.1143/jjap.42.1903
Publication status	Published - 2003 Apr
Externally published	Yes

Keywords

Interface
Layer-by-layer oxidation
Multilayer oxidation
Oxidation
Oxidation stress
Roughness
Silicon
Silicon dioxide
Step
Terrace

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/jjap.42.1903

Cite this

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title = "Topography change due to multilayer oxidation at SiO2/Si(111) interfaces",

abstract = "Using a Si(111) surface with atomistically flat wide terraces, topography change of the SiO2/Si interfaces during thermal oxidation was investigated by means of atomic force microscopy. We observed vestiges of oxidation at the interfaces of SiO2 films with various thicknesses at three different temperatures. We found that the SiO2/Si interface consisted of at least three layers over the entire range of our experiments. This result indicates that layer-by-layer oxidation does not progress at the SiO2/Si interfaces strictly. The densities of vestiges get increased as the oxidation temperature decreased. This topographic change arises from the different temperature dependence between two oxidation rates in parallel and perpendicular to the SiO2/Si interface.",

keywords = "Interface, Layer-by-layer oxidation, Multilayer oxidation, Oxidation, Oxidation stress, Roughness, Silicon, Silicon dioxide, Step, Terrace",

author = "Daisuke Hojo and Hitoshi Oeda and Norio Tokuda and Kikuo Yamabe",

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language = "English",

volume = "42",

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journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

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T1 - Topography change due to multilayer oxidation at SiO2/Si(111) interfaces

AU - Hojo, Daisuke

AU - Oeda, Hitoshi

AU - Tokuda, Norio

AU - Yamabe, Kikuo

PY - 2003/4

Y1 - 2003/4

N2 - Using a Si(111) surface with atomistically flat wide terraces, topography change of the SiO2/Si interfaces during thermal oxidation was investigated by means of atomic force microscopy. We observed vestiges of oxidation at the interfaces of SiO2 films with various thicknesses at three different temperatures. We found that the SiO2/Si interface consisted of at least three layers over the entire range of our experiments. This result indicates that layer-by-layer oxidation does not progress at the SiO2/Si interfaces strictly. The densities of vestiges get increased as the oxidation temperature decreased. This topographic change arises from the different temperature dependence between two oxidation rates in parallel and perpendicular to the SiO2/Si interface.

AB - Using a Si(111) surface with atomistically flat wide terraces, topography change of the SiO2/Si interfaces during thermal oxidation was investigated by means of atomic force microscopy. We observed vestiges of oxidation at the interfaces of SiO2 films with various thicknesses at three different temperatures. We found that the SiO2/Si interface consisted of at least three layers over the entire range of our experiments. This result indicates that layer-by-layer oxidation does not progress at the SiO2/Si interfaces strictly. The densities of vestiges get increased as the oxidation temperature decreased. This topographic change arises from the different temperature dependence between two oxidation rates in parallel and perpendicular to the SiO2/Si interface.

KW - Interface

KW - Layer-by-layer oxidation

KW - Multilayer oxidation

KW - Oxidation

KW - Oxidation stress

KW - Roughness

KW - Silicon

KW - Silicon dioxide

KW - Step

KW - Terrace

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