Topography change due to multilayer oxidation at SiO2/Si(111) interfaces

Daisuke Hojo, Hitoshi Oeda, Norio Tokuda, Kikuo Yamabe

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)


Using a Si(111) surface with atomistically flat wide terraces, topography change of the SiO2/Si interfaces during thermal oxidation was investigated by means of atomic force microscopy. We observed vestiges of oxidation at the interfaces of SiO2 films with various thicknesses at three different temperatures. We found that the SiO2/Si interface consisted of at least three layers over the entire range of our experiments. This result indicates that layer-by-layer oxidation does not progress at the SiO2/Si interfaces strictly. The densities of vestiges get increased as the oxidation temperature decreased. This topographic change arises from the different temperature dependence between two oxidation rates in parallel and perpendicular to the SiO2/Si interface.

Original languageEnglish
Pages (from-to)1903-1906
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number4 B
Publication statusPublished - 2003 Apr
Externally publishedYes


  • Interface
  • Layer-by-layer oxidation
  • Multilayer oxidation
  • Oxidation
  • Oxidation stress
  • Roughness
  • Silicon
  • Silicon dioxide
  • Step
  • Terrace

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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