Toggling MRAM with four antiferromagnetically (AF) coupled ferromagnetic (FM) layers is proposed. The AF coupling strength between the inner FM layers should be larger than between the others. The four-FM-layer toggle cell shows not only good thermal stability but also a large write margin even with a small spin flop field. The advanced toggle cell has the potential to decrease write current by half compared with the basic two-FM-layer cell and can improve MRAM scalability.
|Number of pages||2|
|Journal||Digest of Technical Papers - Symposium on VLSI Technology|
|Publication status||Published - 2005 Dec 1|
|Event||2005 Symposium on VLSI Technology - Kyoto, Japan|
Duration: 2005 Jun 14 → 2005 Jun 14
ASJC Scopus subject areas
- Electrical and Electronic Engineering