Toggling cell with four antiferromagnetically coupled ferromagnetic layers for high density MRAM with low switching current

T. Suzuki; Y. Fukumoto; K. Mori; H. Honjo; R. Nebashi; S. Miura; K. Nagahara; S. Saito; H. Numata; K. Tsuji; T. Sugibayashi; H. Hada; N. Ishiwata; Y. Asao; S. Ikegawa; H. Yoda; S. Tahara

doi:10.1109/.2005.1469262

Toggling cell with four antiferromagnetically coupled ferromagnetic layers for high density MRAM with low switching current

T. Suzuki, Y. Fukumoto, K. Mori, H. Honjo, R. Nebashi, S. Miura, K. Nagahara, S. Saito, H. Numata, K. Tsuji, T. Sugibayashi, H. Hada, N. Ishiwata, Y. Asao, S. Ikegawa, H. Yoda, S. Tahara

Research output: Contribution to journal › Conference article › peer-review

10 Citations (Scopus)

Abstract

Toggling MRAM with four antiferromagnetically (AF) coupled ferromagnetic (FM) layers is proposed. The AF coupling strength between the inner FM layers should be larger than between the others. The four-FM-layer toggle cell shows not only good thermal stability but also a large write margin even with a small spin flop field. The advanced toggle cell has the potential to decrease write current by half compared with the basic two-FM-layer cell and can improve MRAM scalability.

Original language	English
Article number	1469262
Pages (from-to)	188-189
Number of pages	2
Journal	Digest of Technical Papers - Symposium on VLSI Technology
Volume	2005
DOIs	https://doi.org/10.1109/.2005.1469262
Publication status	Published - 2005
Externally published	Yes
Event	2005 Symposium on VLSI Technology - Kyoto, Japan Duration: 2005 Jun 14 → 2005 Jun 14

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/.2005.1469262

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Suzuki, T., Fukumoto, Y., Mori, K., Honjo, H., Nebashi, R., Miura, S., Nagahara, K., Saito, S., Numata, H., Tsuji, K., Sugibayashi, T., Hada, H., Ishiwata, N., Asao, Y., Ikegawa, S., Yoda, H., & Tahara, S. (2005). Toggling cell with four antiferromagnetically coupled ferromagnetic layers for high density MRAM with low switching current. Digest of Technical Papers - Symposium on VLSI Technology, 2005, 188-189. [1469262]. https://doi.org/10.1109/.2005.1469262

Toggling cell with four antiferromagnetically coupled ferromagnetic layers for high density MRAM with low switching current. / Suzuki, T.; Fukumoto, Y.; Mori, K.; Honjo, H.; Nebashi, R.; Miura, S.; Nagahara, K.; Saito, S.; Numata, H.; Tsuji, K.; Sugibayashi, T.; Hada, H.; Ishiwata, N.; Asao, Y.; Ikegawa, S.; Yoda, H.; Tahara, S.

In: Digest of Technical Papers - Symposium on VLSI Technology, Vol. 2005, 1469262, 2005, p. 188-189.

Research output: Contribution to journal › Conference article › peer-review

Suzuki, T, Fukumoto, Y, Mori, K, Honjo, H, Nebashi, R, Miura, S, Nagahara, K, Saito, S, Numata, H, Tsuji, K, Sugibayashi, T, Hada, H, Ishiwata, N, Asao, Y, Ikegawa, S, Yoda, H & Tahara, S 2005, 'Toggling cell with four antiferromagnetically coupled ferromagnetic layers for high density MRAM with low switching current', Digest of Technical Papers - Symposium on VLSI Technology, vol. 2005, 1469262, pp. 188-189. https://doi.org/10.1109/.2005.1469262

Suzuki, T. ; Fukumoto, Y. ; Mori, K. ; Honjo, H. ; Nebashi, R. ; Miura, S. ; Nagahara, K. ; Saito, S. ; Numata, H. ; Tsuji, K. ; Sugibayashi, T. ; Hada, H. ; Ishiwata, N. ; Asao, Y. ; Ikegawa, S. ; Yoda, H. ; Tahara, S. / Toggling cell with four antiferromagnetically coupled ferromagnetic layers for high density MRAM with low switching current. In: Digest of Technical Papers - Symposium on VLSI Technology. 2005 ; Vol. 2005. pp. 188-189.

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abstract = "Toggling MRAM with four antiferromagnetically (AF) coupled ferromagnetic (FM) layers is proposed. The AF coupling strength between the inner FM layers should be larger than between the others. The four-FM-layer toggle cell shows not only good thermal stability but also a large write margin even with a small spin flop field. The advanced toggle cell has the potential to decrease write current by half compared with the basic two-FM-layer cell and can improve MRAM scalability.",

author = "T. Suzuki and Y. Fukumoto and K. Mori and H. Honjo and R. Nebashi and S. Miura and K. Nagahara and S. Saito and H. Numata and K. Tsuji and T. Sugibayashi and H. Hada and N. Ishiwata and Y. Asao and S. Ikegawa and H. Yoda and S. Tahara",

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AU - Suzuki, T.

AU - Fukumoto, Y.

AU - Mori, K.

AU - Honjo, H.

AU - Nebashi, R.

AU - Miura, S.

AU - Nagahara, K.

AU - Saito, S.

AU - Numata, H.

AU - Tsuji, K.

AU - Sugibayashi, T.

AU - Hada, H.

AU - Ishiwata, N.

AU - Asao, Y.

AU - Ikegawa, S.

AU - Yoda, H.

AU - Tahara, S.

PY - 2005

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AB - Toggling MRAM with four antiferromagnetically (AF) coupled ferromagnetic (FM) layers is proposed. The AF coupling strength between the inner FM layers should be larger than between the others. The four-FM-layer toggle cell shows not only good thermal stability but also a large write margin even with a small spin flop field. The advanced toggle cell has the potential to decrease write current by half compared with the basic two-FM-layer cell and can improve MRAM scalability.

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Toggling cell with four antiferromagnetically coupled ferromagnetic layers for high density MRAM with low switching current

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