Toggling cell with four antiferromagnetically coupled ferromagnetic layers for high density MRAM with low switching current

T. Suzuki, Y. Fukumoto, K. Mori, H. Honjo, R. Nebashi, S. Miura, K. Nagahara, S. Saito, H. Numata, K. Tsuji, T. Sugibayashi, H. Hada, N. Ishiwata, Y. Asao, S. Ikegawa, H. Yoda, S. Tahara

Research output: Contribution to journalConference articlepeer-review

10 Citations (Scopus)

Abstract

Toggling MRAM with four antiferromagnetically (AF) coupled ferromagnetic (FM) layers is proposed. The AF coupling strength between the inner FM layers should be larger than between the others. The four-FM-layer toggle cell shows not only good thermal stability but also a large write margin even with a small spin flop field. The advanced toggle cell has the potential to decrease write current by half compared with the basic two-FM-layer cell and can improve MRAM scalability.

Original languageEnglish
Article number1469262
Pages (from-to)188-189
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
Volume2005
DOIs
Publication statusPublished - 2005
Externally publishedYes
Event2005 Symposium on VLSI Technology - Kyoto, Japan
Duration: 2005 Jun 142005 Jun 14

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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