Abstract
Toggling MRAM with four antiferromagnetically (AF) coupled ferromagnetic (FM) layers is proposed. The AF coupling strength between the inner FM layers should be larger than between the others. The four-FM-layer toggle cell shows not only good thermal stability but also a large write margin even with a small spin flop field. The advanced toggle cell has the potential to decrease write current by half compared with the basic two-FM-layer cell and can improve MRAM scalability.
Original language | English |
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Article number | 1469262 |
Pages (from-to) | 188-189 |
Number of pages | 2 |
Journal | Digest of Technical Papers - Symposium on VLSI Technology |
Volume | 2005 |
DOIs | |
Publication status | Published - 2005 |
Externally published | Yes |
Event | 2005 Symposium on VLSI Technology - Kyoto, Japan Duration: 2005 Jun 14 → 2005 Jun 14 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering