TMR-based logic-in-memory circuit for low-power VLSI

Akira Mochizuki, Hiromitsu Kimura, Mitsuru Ibuki, Takahiro Hanyu

Research output: Contribution to journalArticlepeer-review

55 Citations (Scopus)


A tunneling magnetoresistive(TMR)-based logic-in-memory circuit, where storage functions are distributed over a logic-circuit plane, is proposed for a low-power VLSI system. Since the TMR device is regarded as a variable resistor with a non-volatile storage capability, any logic functions with external inputs and stored inputs can be performed by using the TMR-based resistor/transistor network. The combination of dynamic current-mode circuitry and a TMR-based logic network makes it possible to perform any switching operations without steady current, which results in power saving. A design example of an SAD unit for MPEG encoding is discussed, and its advantages are demonstrated.

Original languageEnglish
Pages (from-to)1408-1414
Number of pages7
JournalIEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences
Issue number6
Publication statusPublished - 2005 Jun


  • Dynamic current-mode logic
  • Logic func-tion
  • MRAM
  • Sum of absolute differences
  • TMR device

ASJC Scopus subject areas

  • Signal Processing
  • Computer Graphics and Computer-Aided Design
  • Electrical and Electronic Engineering
  • Applied Mathematics


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