TlBr gamma-ray spectrometers using the depth sensitive single polarity charge sensing technique

Keitaro Hitomi; Toshiyuki Onodera; Tadayoshi Shoji; Yukio Hiratate; Zhong He

doi:10.1109/TNS.2008.924086

TlBr gamma-ray spectrometers using the depth sensitive single polarity charge sensing technique

Keitaro Hitomi, Toshiyuki Onodera, Tadayoshi Shoji, Yukio Hiratate, Zhong He

ENG - Quantum Science and Energy Engineering

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

Pixellated thallium bromide (TlBr) gamma-ray spectrometers were fabricated and evaluated with the depth sensitive single polarity charge sensing technique. The detectors exhibited energy resolutions of 2.22%, 1.22% and 1.11% for 356 keV, 662 keV and 1.33 MeV, respectively, at room temperature. Direct measurements of electron mobility-lifetime products in TlBr detectors were performed. An electron mobility-lifetime product of 4.1 × 10^-3 cm² /V was obtained from a TlBr detector.

Original language	English
Article number	4545133
Pages (from-to)	1781-1784
Number of pages	4
Journal	IEEE Transactions on Nuclear Science
Volume	55
Issue number	3
DOIs	https://doi.org/10.1109/TNS.2008.924086
Publication status	Published - 2008 Jun

Keywords

Position-sensitive detector
Semiconductor detector
Thallium bromide

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/TNS.2008.924086

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title = "TlBr gamma-ray spectrometers using the depth sensitive single polarity charge sensing technique",

abstract = "Pixellated thallium bromide (TlBr) gamma-ray spectrometers were fabricated and evaluated with the depth sensitive single polarity charge sensing technique. The detectors exhibited energy resolutions of 2.22%, 1.22% and 1.11% for 356 keV, 662 keV and 1.33 MeV, respectively, at room temperature. Direct measurements of electron mobility-lifetime products in TlBr detectors were performed. An electron mobility-lifetime product of 4.1 × 10-3 cm2 /V was obtained from a TlBr detector.",

keywords = "Position-sensitive detector, Semiconductor detector, Thallium bromide",

author = "Keitaro Hitomi and Toshiyuki Onodera and Tadayoshi Shoji and Yukio Hiratate and Zhong He",

year = "2008",

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language = "English",

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T1 - TlBr gamma-ray spectrometers using the depth sensitive single polarity charge sensing technique

AU - Hitomi, Keitaro

AU - Onodera, Toshiyuki

AU - Shoji, Tadayoshi

AU - Hiratate, Yukio

AU - He, Zhong

PY - 2008/6

Y1 - 2008/6

N2 - Pixellated thallium bromide (TlBr) gamma-ray spectrometers were fabricated and evaluated with the depth sensitive single polarity charge sensing technique. The detectors exhibited energy resolutions of 2.22%, 1.22% and 1.11% for 356 keV, 662 keV and 1.33 MeV, respectively, at room temperature. Direct measurements of electron mobility-lifetime products in TlBr detectors were performed. An electron mobility-lifetime product of 4.1 × 10-3 cm2 /V was obtained from a TlBr detector.

AB - Pixellated thallium bromide (TlBr) gamma-ray spectrometers were fabricated and evaluated with the depth sensitive single polarity charge sensing technique. The detectors exhibited energy resolutions of 2.22%, 1.22% and 1.11% for 356 keV, 662 keV and 1.33 MeV, respectively, at room temperature. Direct measurements of electron mobility-lifetime products in TlBr detectors were performed. An electron mobility-lifetime product of 4.1 × 10-3 cm2 /V was obtained from a TlBr detector.

KW - Position-sensitive detector

KW - Semiconductor detector

KW - Thallium bromide

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M3 - Article

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VL - 55

SP - 1781

EP - 1784

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

IS - 3

M1 - 4545133

ER -

TlBr gamma-ray spectrometers using the depth sensitive single polarity charge sensing technique

Abstract

Keywords

ASJC Scopus subject areas

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