Abstract
Capacitive Frisch grid detectors with the dimensions of 2 mm\,\times\,2 mm\,\times\,4.4 mm were fabricated from TlBr crystals grown by the travelling molten zone method using zone-purified materials. Spectroscopic performance of the detectors was evaluated at room temperature (24\circ C), {-} 5\circ C and {-} 20\circ C. The TlBr detector exhibited an energy resolution of 1.6% FWHM at 662 keV with a peak-to-Compton ratio of 8.7 with the depth correction at room temperature. Improvement of the detector performance was achieved by cooling the detector-preamplifier system. The energy resolutions of 3.4%, 1.5%, 1.0% and 0.9% FWHM at 122 keV, 356 keV, 662 keV and 1332 keV, respectively, were recorded with the TlBr detector without the depth correction at {-} 5\circ C. An energy resolution of 0.9% FWHM at 662 keV with a peak-to-Compton ratio of 18.2 was obtained from the TlBr detector with the depth correction at {-}20\circC. An upper limit for the Fano factor of TlBr was estimated to be 0.43 at {-}20\circC.
Original language | English |
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Article number | 6329463 |
Pages (from-to) | 1156-1161 |
Number of pages | 6 |
Journal | IEEE Transactions on Nuclear Science |
Volume | 60 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2013 |
Keywords
- Gamma ray detectors
- semiconductor radiation detectors
- thallium bromide
- wide band gap semiconductors
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Nuclear Energy and Engineering
- Electrical and Electronic Engineering