The epitaxial growth of titanium nitride (TiN) films, formed by implanting nitrogen ions (N2+) with 62 KeV into 100-nm-thick Ti films grown on NaCl substrates held at 250°C, has been studied mainly by transmission electron microscopy. It has been revealed that (001)-oriented TiNy is epitaxially grown by N-implantation into the as-grown (03·5)-oriented hcp-Ti. The nitriding mechanism of epitaxial Ti thin films is discussed.
|Number of pages||2|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||4 A|
|Publication status||Published - 1997 Apr 1|
- Evaporated Ti films
ASJC Scopus subject areas
- Physics and Astronomy(all)