Tinv scaling and gate leakage reduction for n-type metal oxide semiconductor field effect transistor with HfSix/HfO2 gate stack by interfacial layer formation using ozone-water-last treatment

Itaru Oshiyama; Kaori Tai; Tomoyuki Hirano; Shinpei Yamaguchi; Kazuaki Tanaka; Yoshiya Hagtmoto; Takayuki Uemura; Takashi Ando; Koji Watanabe; Ryo Yamamoto; Saori Kanda; Junli Wang; Yasushi Tateshita; Hitoshi Wakabayashi; Yukio Tagawa; Masanori Tsukamoto; Hayato Iwamoto; Masaki Saito; Masaharu Oshima; Satoshi Toyoda; Naoki Nagashima; Shingo Kadomura

doi:10.1143/JJAP.47.2379

Tinv scaling and gate leakage reduction for n-type metal oxide semiconductor field effect transistor with HfSi_x/HfO₂ gate stack by interfacial layer formation using ozone-water-last treatment

Itaru Oshiyama, Kaori Tai, Tomoyuki Hirano, Shinpei Yamaguchi, Kazuaki Tanaka, Yoshiya Hagtmoto, Takayuki Uemura, Takashi Ando, Koji Watanabe, Ryo Yamamoto, Saori Kanda, Junli Wang, Yasushi Tateshita, Hitoshi Wakabayashi, Yukio Tagawa, Masanori Tsukamoto, Hayato Iwamoto, Masaki Saito, Masaharu Oshima, Satoshi ToyodaNaoki Nagashima, Shingo Kadomura

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

In this paper, we demonstrate a wet treatment for the HfSi _x/HfO₂ gate stack of n-type metal oxide semiconductor field effect transistor (nMOSFET) fabricated by a gate-last process in order to scale down the electrical thickness at inversion state T_inv value and reduce the gate leakage J_g. As a result, we succeeded in scaling down T_inv to 1.41 nm without mobility or J_g degradation by ozone-water-last treatment. We found that a high-density interfacial layer (IFL) is formed owing to the ozone-water-last treatment, and Hf diffusion to the IFL is suppressed, which was analyzed by high-resolution angle-resolved spectroscopy.

Original language	English
Pages (from-to)	2379-2382
Number of pages	4
Journal	Japanese journal of applied physics
Volume	47
Issue number	4 PART 2
DOIs	https://doi.org/10.1143/JJAP.47.2379
Publication status	Published - 2008 Apr 25

Keywords

Gate-last process
HR-ARS
Hf diffusion
HfO
HfSi
IFL
J
MEM
Ozone water
T
nMOSFET

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.47.2379

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Oshiyama, I., Tai, K., Hirano, T., Yamaguchi, S., Tanaka, K., Hagtmoto, Y., Uemura, T., Ando, T., Watanabe, K., Yamamoto, R., Kanda, S., Wang, J., Tateshita, Y., Wakabayashi, H., Tagawa, Y., Tsukamoto, M., Iwamoto, H., Saito, M., Oshima, M., ... Kadomura, S. (2008). Tinv scaling and gate leakage reduction for n-type metal oxide semiconductor field effect transistor with HfSi_x/HfO₂ gate stack by interfacial layer formation using ozone-water-last treatment. Japanese journal of applied physics, 47(4 PART 2), 2379-2382. https://doi.org/10.1143/JJAP.47.2379

Tinv scaling and gate leakage reduction for n-type metal oxide semiconductor field effect transistor with HfSi_x/HfO₂ gate stack by interfacial layer formation using ozone-water-last treatment. / Oshiyama, Itaru; Tai, Kaori; Hirano, Tomoyuki; Yamaguchi, Shinpei; Tanaka, Kazuaki; Hagtmoto, Yoshiya; Uemura, Takayuki; Ando, Takashi; Watanabe, Koji; Yamamoto, Ryo; Kanda, Saori; Wang, Junli; Tateshita, Yasushi; Wakabayashi, Hitoshi; Tagawa, Yukio; Tsukamoto, Masanori; Iwamoto, Hayato; Saito, Masaki; Oshima, Masaharu; Toyoda, Satoshi; Nagashima, Naoki; Kadomura, Shingo.

In: Japanese journal of applied physics, Vol. 47, No. 4 PART 2, 25.04.2008, p. 2379-2382.

Research output: Contribution to journal › Article › peer-review

Oshiyama, I, Tai, K, Hirano, T, Yamaguchi, S, Tanaka, K, Hagtmoto, Y, Uemura, T, Ando, T, Watanabe, K, Yamamoto, R, Kanda, S, Wang, J, Tateshita, Y, Wakabayashi, H, Tagawa, Y, Tsukamoto, M, Iwamoto, H, Saito, M, Oshima, M, Toyoda, S, Nagashima, N & Kadomura, S 2008, 'Tinv scaling and gate leakage reduction for n-type metal oxide semiconductor field effect transistor with HfSi_x/HfO₂ gate stack by interfacial layer formation using ozone-water-last treatment', Japanese journal of applied physics, vol. 47, no. 4 PART 2, pp. 2379-2382. https://doi.org/10.1143/JJAP.47.2379

Oshiyama I, Tai K, Hirano T, Yamaguchi S, Tanaka K, Hagtmoto Y et al. Tinv scaling and gate leakage reduction for n-type metal oxide semiconductor field effect transistor with HfSi_x/HfO₂ gate stack by interfacial layer formation using ozone-water-last treatment. Japanese journal of applied physics. 2008 Apr 25;47(4 PART 2):2379-2382. https://doi.org/10.1143/JJAP.47.2379

Oshiyama, Itaru ; Tai, Kaori ; Hirano, Tomoyuki ; Yamaguchi, Shinpei ; Tanaka, Kazuaki ; Hagtmoto, Yoshiya ; Uemura, Takayuki ; Ando, Takashi ; Watanabe, Koji ; Yamamoto, Ryo ; Kanda, Saori ; Wang, Junli ; Tateshita, Yasushi ; Wakabayashi, Hitoshi ; Tagawa, Yukio ; Tsukamoto, Masanori ; Iwamoto, Hayato ; Saito, Masaki ; Oshima, Masaharu ; Toyoda, Satoshi ; Nagashima, Naoki ; Kadomura, Shingo. / Tinv scaling and gate leakage reduction for n-type metal oxide semiconductor field effect transistor with HfSi_x/HfO₂ gate stack by interfacial layer formation using ozone-water-last treatment. In: Japanese journal of applied physics. 2008 ; Vol. 47, No. 4 PART 2. pp. 2379-2382.

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abstract = "In this paper, we demonstrate a wet treatment for the HfSi x/HfO2 gate stack of n-type metal oxide semiconductor field effect transistor (nMOSFET) fabricated by a gate-last process in order to scale down the electrical thickness at inversion state Tinv value and reduce the gate leakage Jg. As a result, we succeeded in scaling down Tinv to 1.41 nm without mobility or Jg degradation by ozone-water-last treatment. We found that a high-density interfacial layer (IFL) is formed owing to the ozone-water-last treatment, and Hf diffusion to the IFL is suppressed, which was analyzed by high-resolution angle-resolved spectroscopy.",

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AU - Tai, Kaori

AU - Hirano, Tomoyuki

AU - Yamaguchi, Shinpei

AU - Tanaka, Kazuaki

AU - Hagtmoto, Yoshiya

AU - Uemura, Takayuki

AU - Ando, Takashi

AU - Watanabe, Koji

AU - Yamamoto, Ryo

AU - Kanda, Saori

AU - Wang, Junli

AU - Tateshita, Yasushi

AU - Wakabayashi, Hitoshi

AU - Tagawa, Yukio

AU - Tsukamoto, Masanori

AU - Iwamoto, Hayato

AU - Saito, Masaki

AU - Oshima, Masaharu

AU - Toyoda, Satoshi

AU - Nagashima, Naoki

AU - Kadomura, Shingo

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Y1 - 2008/4/25

N2 - In this paper, we demonstrate a wet treatment for the HfSi x/HfO2 gate stack of n-type metal oxide semiconductor field effect transistor (nMOSFET) fabricated by a gate-last process in order to scale down the electrical thickness at inversion state Tinv value and reduce the gate leakage Jg. As a result, we succeeded in scaling down Tinv to 1.41 nm without mobility or Jg degradation by ozone-water-last treatment. We found that a high-density interfacial layer (IFL) is formed owing to the ozone-water-last treatment, and Hf diffusion to the IFL is suppressed, which was analyzed by high-resolution angle-resolved spectroscopy.

AB - In this paper, we demonstrate a wet treatment for the HfSi x/HfO2 gate stack of n-type metal oxide semiconductor field effect transistor (nMOSFET) fabricated by a gate-last process in order to scale down the electrical thickness at inversion state Tinv value and reduce the gate leakage Jg. As a result, we succeeded in scaling down Tinv to 1.41 nm without mobility or Jg degradation by ozone-water-last treatment. We found that a high-density interfacial layer (IFL) is formed owing to the ozone-water-last treatment, and Hf diffusion to the IFL is suppressed, which was analyzed by high-resolution angle-resolved spectroscopy.

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