Abstract
In this paper, we demonstrate a wet treatment for the HfSi x/HfO2 gate stack of n-type metal oxide semiconductor field effect transistor (nMOSFET) fabricated by a gate-last process in order to scale down the electrical thickness at inversion state Tinv value and reduce the gate leakage Jg. As a result, we succeeded in scaling down Tinv to 1.41 nm without mobility or Jg degradation by ozone-water-last treatment. We found that a high-density interfacial layer (IFL) is formed owing to the ozone-water-last treatment, and Hf diffusion to the IFL is suppressed, which was analyzed by high-resolution angle-resolved spectroscopy.
Original language | English |
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Pages (from-to) | 2379-2382 |
Number of pages | 4 |
Journal | Japanese journal of applied physics |
Volume | 47 |
Issue number | 4 PART 2 |
DOIs | |
Publication status | Published - 2008 Apr 25 |
Keywords
- Gate-last process
- HR-ARS
- Hf diffusion
- HfO
- HfSi
- IFL
- J
- MEM
- Ozone water
- T
- nMOSFET
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)