Tinv scaling and gate leakage reduction for n-type metal oxide semiconductor field effect transistor with HfSix/HfO2 gate stack by interfacial layer formation using ozone-water-last treatment

Itaru Oshiyama, Kaori Tai, Tomoyuki Hirano, Shinpei Yamaguchi, Kazuaki Tanaka, Yoshiya Hagtmoto, Takayuki Uemura, Takashi Ando, Koji Watanabe, Ryo Yamamoto, Saori Kanda, Junli Wang, Yasushi Tateshita, Hitoshi Wakabayashi, Yukio Tagawa, Masanori Tsukamoto, Hayato Iwamoto, Masaki Saito, Masaharu Oshima, Satoshi ToyodaNaoki Nagashima, Shingo Kadomura

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

In this paper, we demonstrate a wet treatment for the HfSi x/HfO2 gate stack of n-type metal oxide semiconductor field effect transistor (nMOSFET) fabricated by a gate-last process in order to scale down the electrical thickness at inversion state Tinv value and reduce the gate leakage Jg. As a result, we succeeded in scaling down Tinv to 1.41 nm without mobility or Jg degradation by ozone-water-last treatment. We found that a high-density interfacial layer (IFL) is formed owing to the ozone-water-last treatment, and Hf diffusion to the IFL is suppressed, which was analyzed by high-resolution angle-resolved spectroscopy.

Original languageEnglish
Pages (from-to)2379-2382
Number of pages4
JournalJapanese journal of applied physics
Volume47
Issue number4 PART 2
DOIs
Publication statusPublished - 2008 Apr 25

Keywords

  • Gate-last process
  • HR-ARS
  • Hf diffusion
  • HfO
  • HfSi
  • IFL
  • J
  • MEM
  • Ozone water
  • T
  • nMOSFET

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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