TiN capping effect on high temperature annealed RE-oxide MOS capacitors for scaled EOT

D. Kitayama, T. Koyanagi, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    The effect of TiN capping on high temperature annealed W gated La 2O3 dielectrics capacitors has been characterized. The increase in EOT has been well suppressed with TiN capping and a 0.55 nm EOT has been achieved even after an 900°C annealing. The electrical characterization has revealed a significant reduction in the capacitance-voltage (C-V) hysteresis and leakage current density when the annealing temperature is 900°C or higher.

    Original languageEnglish
    Title of host publicationPhysics and Technology of High-k Materials 8
    Pages527-535
    Number of pages9
    Edition3
    DOIs
    Publication statusPublished - 2010
    Event8th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonice - 218th ECS Meeting - Las Vegas, NV, United States
    Duration: 2010 Oct 112010 Oct 15

    Publication series

    NameECS Transactions
    Number3
    Volume33
    ISSN (Print)1938-5862
    ISSN (Electronic)1938-6737

    Other

    Other8th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonice - 218th ECS Meeting
    CountryUnited States
    CityLas Vegas, NV
    Period10/10/1110/10/15

    ASJC Scopus subject areas

    • Engineering(all)

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  • Cite this

    Kitayama, D., Koyanagi, T., Kakushima, K., Ahmet, P., Tsutsui, K., Nishiyama, A., Sugii, N., Natori, K., Hattori, T., & Iwai, H. (2010). TiN capping effect on high temperature annealed RE-oxide MOS capacitors for scaled EOT. In Physics and Technology of High-k Materials 8 (3 ed., pp. 527-535). (ECS Transactions; Vol. 33, No. 3). https://doi.org/10.1149/1.3481642