TiN capping effect on high temperature annealed RE-oxide MOS capacitors for scaled EOT

D. Kitayama, T. Koyanagi, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The effect of TiN capping on high temperature annealed W gated La 2O3 dielectrics capacitors has been characterized. The increase in EOT has been well suppressed with TiN capping and a 0.55 nm EOT has been achieved even after an 900°C annealing. The electrical characterization has revealed a significant reduction in the capacitance-voltage (C-V) hysteresis and leakage current density when the annealing temperature is 900°C or higher.

Original languageEnglish
Title of host publicationPhysics and Technology of High-k Materials 8
PublisherElectrochemical Society Inc.
Pages527-535
Number of pages9
Edition3
ISBN (Electronic)9781607681724
ISBN (Print)9781566778220
DOIs
Publication statusPublished - 2010
Externally publishedYes

Publication series

NameECS Transactions
Number3
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

ASJC Scopus subject areas

  • Engineering(all)

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