Time-resolved photoluminescence of ZnCdSe single quantum dots

B. P. Zhang, Y. Q. Li, T. Yasuda, Y. Segawa, K. Edamatsu, T. Itoh

Research output: Contribution to journalConference articlepeer-review

11 Citations (Scopus)

Abstract

Time-resolved photoluminescence study is carried out on ZnCdSe quantum dots (QDs) that are spontaneously formed on cleavage-induced fresh ZnSe (110) surface. Both rise and decay times show dependence on QD sizes. The size dependence of rise time is explained by the carrier capture from the ZnSe barrier into the QDs, which is determined by the overlap between the wave functions of the QD state and the barrier state. On the other hand, the decay time is interpreted by taking into account the electron-hole separation and the overlap between the wave functions of the electrons and the holes.

Original languageEnglish
Pages (from-to)765-769
Number of pages5
JournalJournal of Crystal Growth
Volume214
DOIs
Publication statusPublished - 2000 Jun 2
Externally publishedYes
EventThe 9th International Conference on II-VI Compounds - Kyoto, Jpn
Duration: 1999 Nov 11999 Nov 5

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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