Time-resolved photoluminescence of a two-dimensional electron gas in an Al0.2Ga0.8N/GaN heterostructure fabricated on ammonothermal GaN substrates

Shigefusa F. Chichibu, Kouji Hazu, Yuji Kagamitani, Takeyoshi Onuma, Dirk Ehrentraut, Tsuguo Fukuda, Tohru Ishiguro

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8 Citations (Scopus)

Abstract

A characteristic photoluminescence signal is identified for a two-dimensional electron gas (2DEG) confined at an Al0.2Ga 0.8N/GaN heterointerface fabricated on an ammonothermal GaN (AT-GaN) substrate. The use of a gas-phase synthesized NH4Cl acidic mineralizer reduced oxygen contamination in AT-GaN by two orders of magnitude, and metalorganic vapor phase epitaxy of atomically smooth, coherent AlGaN/GaN heterostructures was realized. The emission originating from the 2DEG is interpreted using self-consistent Schrödinger-Poisson calculation, taking the interfacial immobile charge due to polarization discontinuity into account. The initial decay time at low temperature was close to that of the bulk free excitons, reflecting the lifetime of photoexcited holes.

Original languageEnglish
Article number045501
JournalApplied Physics Express
Volume4
Issue number4
DOIs
Publication statusPublished - 2011 Apr

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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