Time-resolved investigations of sidewall recombination and in-plane diffusivity in dry-etched InGaAs/GaAs air-post structures

Yoshihiro Nambu, Hiroyuki Yokoyama, Takashi Yoshikawa, Yoshimasa Sugimoto, Kiyoshi Asakawa

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

Nonradiative carrier recombination in dry-etched InGaAs/GaAs air-post structures is investigated by time-resolved photoluminescence measurement. Both linearly and squarely size-dependent regions are observed in the measured carrier lifetime. It is shown that in-plane diffusivity D r and sidewall nonradiative recombination velocity S r can be simultaneously evaluated using a carrier diffusion model. Comparing an as-etched sample and a sample wet etched after dry etching shows that D r as well as S r are changed by removing the subsurface layer at the sidewall by wet etching. Possible causes of this change and the mechanism determining S r are discussed.

Original languageEnglish
Pages (from-to)481-483
Number of pages3
JournalApplied Physics Letters
Volume65
Issue number4
DOIs
Publication statusPublished - 1994 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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