Time dependence of energy dissipation in resonating silicon cantilevers in ultrahigh vacuum

Takahito Ono; Dong F. Wang; Masayoshi Esashi

doi:10.1063/1.1608485

Time dependence of energy dissipation in resonating silicon cantilevers in ultrahigh vacuum

Takahito Ono, Dong F. Wang, Masayoshi Esashi

Research output: Contribution to journal › Article › peer-review

31 Citations (Scopus)

Abstract

The nanomechanical properties of single-crystalline silicon cantilevers as resonating elements were investigated. It was observed that the flash heating the single-crystalline silicon cantilever at 1000°C in ultrahigh vacuum reduced the mechanical energy dissipation of the oscillating cantilever due to the removal of contaminants and natural oxide and reconstruction of the silicon surface. The Q-factor and influence of gas adsorption on ultrathin single crystalline silicon resonators having (100) and (111)-oriented surfaces were discussed.

Original language	English
Pages (from-to)	1950-1952
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	10
DOIs	https://doi.org/10.1063/1.1608485
Publication status	Published - 2003 Sept 8

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1608485

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AB - The nanomechanical properties of single-crystalline silicon cantilevers as resonating elements were investigated. It was observed that the flash heating the single-crystalline silicon cantilever at 1000°C in ultrahigh vacuum reduced the mechanical energy dissipation of the oscillating cantilever due to the removal of contaminants and natural oxide and reconstruction of the silicon surface. The Q-factor and influence of gas adsorption on ultrathin single crystalline silicon resonators having (100) and (111)-oriented surfaces were discussed.

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Time dependence of energy dissipation in resonating silicon cantilevers in ultrahigh vacuum

Abstract

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