Tight-Pitch Au-Sn Interconnections for 3D-ICs Integration and Packaging Applications

Murugesan Mariappan, Mitsumasa Koyanagi, Takafumi Fukushima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Si TEG chips containing Au-Sn micro-bumps (μ- bump) with various sizes (varying from 3 to 20 μm) and pitch values (between 6 μm and 30 μm) were fabricated, and the flip-chip bonded chips were characterized for micro-structure and electrical resistance of Au-Sn μ-joints. An overall μ-joint height of -1.8 μm was obtained after thermal compression bonding at 180 'C for the 10 μm pitch μ-bumps with solder (Sn) height of 1.0-1.5 μm. The elemental analysis results showed that Au has diffused into the solder layer, and not vice-versa. The formation of seemless microstructure and the obtained resistance data reveal that the Au-Sn μ-joints with minimal height have tremendous potential for its application in the tight-pitch three- dimensional chip integration and packaging.

Original languageEnglish
Title of host publicationProceedings - IEEE 70th Electronic Components and Technology Conference, ECTC 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1448-1452
Number of pages5
ISBN (Electronic)9781728161808
DOIs
Publication statusPublished - 2020 Jun
Event70th IEEE Electronic Components and Technology Conference, ECTC 2020 - Orlando, United States
Duration: 2020 Jun 32020 Jun 30

Publication series

NameProceedings - Electronic Components and Technology Conference
Volume2020-June
ISSN (Print)0569-5503

Conference

Conference70th IEEE Electronic Components and Technology Conference, ECTC 2020
CountryUnited States
CityOrlando
Period20/6/320/6/30

Keywords

  • Au-Sn
  • Die-to-wafer stacking
  • fine-pitch
  • μ-bumps

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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