Tight distribution of dielectric characteristics of HfSiON in metal gate devices

R. Hasunuma; T. Naito; C. Tamura; A. Uedono; K. Shiraishi; N. Umezawa; T. Chikyow; S. Inumiya; M. Sato; Y. Tamura; H. Watanabe; Y. Nara; Y. Ohji; S. Miyazaki; K. Yamada; K. Yamabe

doi:10.1149/1.2779543

Tight distribution of dielectric characteristics of HfSiON in metal gate devices

R. Hasunuma, T. Naito, C. Tamura, A. Uedono, K. Shiraishi, N. Umezawa, T. Chikyow, S. Inumiya, M. Sato, Y. Tamura, H. Watanabe, Y. Nara, Y. Ohji, S. Miyazaki, K. Yamada, K. Yamabe

Advanced Institute for Materials Research (AIMR)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Leakage current characteristics with significantly reduced dispersion were achieved for HfSiON gate dielectric film by selecting TiN gate electrode with low reactivity, compared to the conventional poly-Si gate. The breakdown lifetime and its characteristic homogeneity were also enormously improved. With intensive study on these electrical characteristics, it was concluded that the concentration of oxygen vacancy was significantly reduced, giving rise to the homogeneity improvement. Moreover, we have shown an explanation for the dielectric breakdown in terms of oxygen transport in the Hf-based dielectric film.

Original language	English
Title of host publication	ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks
Pages	3-11
Number of pages	9
Edition	4
DOIs	https://doi.org/10.1149/1.2779543
Publication status	Published - 2007 Dec 1
Event	5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting - Washington, DC, United States Duration: 2007 Oct 8 → 2007 Oct 10

Publication series

Name	ECS Transactions
Number	4
Volume	11
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting
Country	United States
City	Washington, DC
Period	07/10/8 → 07/10/10

ASJC Scopus subject areas

Engineering(all)

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Hasunuma, R., Naito, T., Tamura, C., Uedono, A., Shiraishi, K., Umezawa, N., Chikyow, T., Inumiya, S., Sato, M., Tamura, Y., Watanabe, H., Nara, Y., Ohji, Y., Miyazaki, S., Yamada, K., & Yamabe, K. (2007). Tight distribution of dielectric characteristics of HfSiON in metal gate devices. In ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks (4 ed., pp. 3-11). (ECS Transactions; Vol. 11, No. 4). https://doi.org/10.1149/1.2779543

Tight distribution of dielectric characteristics of HfSiON in metal gate devices. / Hasunuma, R.; Naito, T.; Tamura, C.; Uedono, A.; Shiraishi, K.; Umezawa, N.; Chikyow, T.; Inumiya, S.; Sato, M.; Tamura, Y.; Watanabe, H.; Nara, Y.; Ohji, Y.; Miyazaki, S.; Yamada, K.; Yamabe, K.

ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks. 4. ed. 2007. p. 3-11 (ECS Transactions; Vol. 11, No. 4).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hasunuma, R, Naito, T, Tamura, C, Uedono, A, Shiraishi, K, Umezawa, N, Chikyow, T, Inumiya, S, Sato, M, Tamura, Y, Watanabe, H, Nara, Y, Ohji, Y, Miyazaki, S, Yamada, K & Yamabe, K 2007, Tight distribution of dielectric characteristics of HfSiON in metal gate devices. in ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks. 4 edn, ECS Transactions, no. 4, vol. 11, pp. 3-11, 5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting, Washington, DC, United States, 07/10/8. https://doi.org/10.1149/1.2779543

Hasunuma, R. ; Naito, T. ; Tamura, C. ; Uedono, A. ; Shiraishi, K. ; Umezawa, N. ; Chikyow, T. ; Inumiya, S. ; Sato, M. ; Tamura, Y. ; Watanabe, H. ; Nara, Y. ; Ohji, Y. ; Miyazaki, S. ; Yamada, K. ; Yamabe, K. / Tight distribution of dielectric characteristics of HfSiON in metal gate devices. ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks. 4. ed. 2007. pp. 3-11 (ECS Transactions; 4).

@inproceedings{c0baa89df0fa44a8904cedbc28160ce3,

title = "Tight distribution of dielectric characteristics of HfSiON in metal gate devices",

abstract = "Leakage current characteristics with significantly reduced dispersion were achieved for HfSiON gate dielectric film by selecting TiN gate electrode with low reactivity, compared to the conventional poly-Si gate. The breakdown lifetime and its characteristic homogeneity were also enormously improved. With intensive study on these electrical characteristics, it was concluded that the concentration of oxygen vacancy was significantly reduced, giving rise to the homogeneity improvement. Moreover, we have shown an explanation for the dielectric breakdown in terms of oxygen transport in the Hf-based dielectric film.",

author = "R. Hasunuma and T. Naito and C. Tamura and A. Uedono and K. Shiraishi and N. Umezawa and T. Chikyow and S. Inumiya and M. Sato and Y. Tamura and H. Watanabe and Y. Nara and Y. Ohji and S. Miyazaki and K. Yamada and K. Yamabe",

year = "2007",

month = dec,

day = "1",

doi = "10.1149/1.2779543",

language = "English",

isbn = "9781566775700",

series = "ECS Transactions",

number = "4",

pages = "3--11",

booktitle = "ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks",

edition = "4",

note = "5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting ; Conference date: 08-10-2007 Through 10-10-2007",

}

TY - GEN

T1 - Tight distribution of dielectric characteristics of HfSiON in metal gate devices

AU - Hasunuma, R.

AU - Naito, T.

AU - Tamura, C.

AU - Uedono, A.

AU - Shiraishi, K.

AU - Umezawa, N.

AU - Chikyow, T.

AU - Inumiya, S.

AU - Sato, M.

AU - Tamura, Y.

AU - Watanabe, H.

AU - Nara, Y.

AU - Ohji, Y.

AU - Miyazaki, S.

AU - Yamada, K.

AU - Yamabe, K.

PY - 2007/12/1

Y1 - 2007/12/1

N2 - Leakage current characteristics with significantly reduced dispersion were achieved for HfSiON gate dielectric film by selecting TiN gate electrode with low reactivity, compared to the conventional poly-Si gate. The breakdown lifetime and its characteristic homogeneity were also enormously improved. With intensive study on these electrical characteristics, it was concluded that the concentration of oxygen vacancy was significantly reduced, giving rise to the homogeneity improvement. Moreover, we have shown an explanation for the dielectric breakdown in terms of oxygen transport in the Hf-based dielectric film.

AB - Leakage current characteristics with significantly reduced dispersion were achieved for HfSiON gate dielectric film by selecting TiN gate electrode with low reactivity, compared to the conventional poly-Si gate. The breakdown lifetime and its characteristic homogeneity were also enormously improved. With intensive study on these electrical characteristics, it was concluded that the concentration of oxygen vacancy was significantly reduced, giving rise to the homogeneity improvement. Moreover, we have shown an explanation for the dielectric breakdown in terms of oxygen transport in the Hf-based dielectric film.

UR - http://www.scopus.com/inward/record.url?scp=45249124693&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=45249124693&partnerID=8YFLogxK

U2 - 10.1149/1.2779543

DO - 10.1149/1.2779543

M3 - Conference contribution

AN - SCOPUS:45249124693

SN - 9781566775700

T3 - ECS Transactions

SP - 3

EP - 11

BT - ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks

T2 - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting

Y2 - 8 October 2007 through 10 October 2007

ER -