Tight distribution of dielectric characteristics of HfSiON in metal gate devices

R. Hasunuma, T. Naito, C. Tamura, A. Uedono, K. Shiraishi, N. Umezawa, T. Chikyow, S. Inumiya, M. Sato, Y. Tamura, H. Watanabe, Y. Nara, Y. Ohji, S. Miyazaki, K. Yamada, K. Yamabe

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Leakage current characteristics with significantly reduced dispersion were achieved for HfSiON gate dielectric film by selecting TiN gate electrode with low reactivity, compared to the conventional poly-Si gate. The breakdown lifetime and its characteristic homogeneity were also enormously improved. With intensive study on these electrical characteristics, it was concluded that the concentration of oxygen vacancy was significantly reduced, giving rise to the homogeneity improvement. Moreover, we have shown an explanation for the dielectric breakdown in terms of oxygen transport in the Hf-based dielectric film.

Original languageEnglish
Title of host publicationECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks
Pages3-11
Number of pages9
Edition4
DOIs
Publication statusPublished - 2007 Dec 1
Event5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting - Washington, DC, United States
Duration: 2007 Oct 82007 Oct 10

Publication series

NameECS Transactions
Number4
Volume11
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting
CountryUnited States
CityWashington, DC
Period07/10/807/10/10

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Hasunuma, R., Naito, T., Tamura, C., Uedono, A., Shiraishi, K., Umezawa, N., Chikyow, T., Inumiya, S., Sato, M., Tamura, Y., Watanabe, H., Nara, Y., Ohji, Y., Miyazaki, S., Yamada, K., & Yamabe, K. (2007). Tight distribution of dielectric characteristics of HfSiON in metal gate devices. In ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks (4 ed., pp. 3-11). (ECS Transactions; Vol. 11, No. 4). https://doi.org/10.1149/1.2779543