Tight distribution of dielectric characteristics of HfSiON in metal gate devices

R. Hasunuma; T. Naito; C. Tamura; A. Uedono; K. Shiraishi; N. Umezawa; T. Chikyow; S. Inumiya; M. Sato; Y. Tamura; H. Watanabe; Y. Nara; Y. Ohji; S. Miyazaki; K. Yamada; K. Yamabe

doi:10.1149/1.2779543

Tight distribution of dielectric characteristics of HfSiON in metal gate devices

R. Hasunuma, T. Naito, C. Tamura, A. Uedono, K. Shiraishi, N. Umezawa, T. Chikyow, S. Inumiya, M. Sato, Y. Tamura, H. Watanabe, Y. Nara, Y. Ohji, S. Miyazaki, K. Yamada, K. Yamabe

Advanced Institute for Materials Research (AIMR)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Leakage current characteristics with significantly reduced dispersion were achieved for HfSiON gate dielectric film by selecting TiN gate electrode with low reactivity, compared to the conventional poly-Si gate. The breakdown lifetime and its characteristic homogeneity were also enormously improved. With intensive study on these electrical characteristics, it was concluded that the concentration of oxygen vacancy was significantly reduced, giving rise to the homogeneity improvement. Moreover, we have shown an explanation for the dielectric breakdown in terms of oxygen transport in the Hf-based dielectric film.

Original language	English
Title of host publication	ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks
Pages	3-11
Number of pages	9
Edition	4
DOIs	https://doi.org/10.1149/1.2779543
Publication status	Published - 2007 Dec 1
Event	5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting - Washington, DC, United States Duration: 2007 Oct 8 → 2007 Oct 10

Publication series

Name	ECS Transactions
Number	4
Volume	11
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting
Country/Territory	United States
City	Washington, DC
Period	07/10/8 → 07/10/10

ASJC Scopus subject areas

Engineering(all)

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10.1149/1.2779543

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Hasunuma, R., Naito, T., Tamura, C., Uedono, A., Shiraishi, K., Umezawa, N., Chikyow, T., Inumiya, S., Sato, M., Tamura, Y., Watanabe, H., Nara, Y., Ohji, Y., Miyazaki, S., Yamada, K., & Yamabe, K. (2007). Tight distribution of dielectric characteristics of HfSiON in metal gate devices. In ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks (4 ed., pp. 3-11). (ECS Transactions; Vol. 11, No. 4). https://doi.org/10.1149/1.2779543

Tight distribution of dielectric characteristics of HfSiON in metal gate devices. / Hasunuma, R.; Naito, T.; Tamura, C.; Uedono, A.; Shiraishi, K.; Umezawa, N.; Chikyow, T.; Inumiya, S.; Sato, M.; Tamura, Y.; Watanabe, H.; Nara, Y.; Ohji, Y.; Miyazaki, S.; Yamada, K.; Yamabe, K.

ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks. 4. ed. 2007. p. 3-11 (ECS Transactions; Vol. 11, No. 4).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hasunuma, R, Naito, T, Tamura, C, Uedono, A, Shiraishi, K, Umezawa, N, Chikyow, T, Inumiya, S, Sato, M, Tamura, Y, Watanabe, H, Nara, Y, Ohji, Y, Miyazaki, S, Yamada, K & Yamabe, K 2007, Tight distribution of dielectric characteristics of HfSiON in metal gate devices. in ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks. 4 edn, ECS Transactions, no. 4, vol. 11, pp. 3-11, 5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting, Washington, DC, United States, 07/10/8. https://doi.org/10.1149/1.2779543

Hasunuma, R. ; Naito, T. ; Tamura, C. ; Uedono, A. ; Shiraishi, K. ; Umezawa, N. ; Chikyow, T. ; Inumiya, S. ; Sato, M. ; Tamura, Y. ; Watanabe, H. ; Nara, Y. ; Ohji, Y. ; Miyazaki, S. ; Yamada, K. ; Yamabe, K. / Tight distribution of dielectric characteristics of HfSiON in metal gate devices. ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks. 4. ed. 2007. pp. 3-11 (ECS Transactions; 4).

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abstract = "Leakage current characteristics with significantly reduced dispersion were achieved for HfSiON gate dielectric film by selecting TiN gate electrode with low reactivity, compared to the conventional poly-Si gate. The breakdown lifetime and its characteristic homogeneity were also enormously improved. With intensive study on these electrical characteristics, it was concluded that the concentration of oxygen vacancy was significantly reduced, giving rise to the homogeneity improvement. Moreover, we have shown an explanation for the dielectric breakdown in terms of oxygen transport in the Hf-based dielectric film.",

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AU - Hasunuma, R.

AU - Naito, T.

AU - Tamura, C.

AU - Uedono, A.

AU - Shiraishi, K.

AU - Umezawa, N.

AU - Chikyow, T.

AU - Inumiya, S.

AU - Sato, M.

AU - Tamura, Y.

AU - Watanabe, H.

AU - Nara, Y.

AU - Ohji, Y.

AU - Miyazaki, S.

AU - Yamada, K.

AU - Yamabe, K.

PY - 2007/12/1

Y1 - 2007/12/1

N2 - Leakage current characteristics with significantly reduced dispersion were achieved for HfSiON gate dielectric film by selecting TiN gate electrode with low reactivity, compared to the conventional poly-Si gate. The breakdown lifetime and its characteristic homogeneity were also enormously improved. With intensive study on these electrical characteristics, it was concluded that the concentration of oxygen vacancy was significantly reduced, giving rise to the homogeneity improvement. Moreover, we have shown an explanation for the dielectric breakdown in terms of oxygen transport in the Hf-based dielectric film.

AB - Leakage current characteristics with significantly reduced dispersion were achieved for HfSiON gate dielectric film by selecting TiN gate electrode with low reactivity, compared to the conventional poly-Si gate. The breakdown lifetime and its characteristic homogeneity were also enormously improved. With intensive study on these electrical characteristics, it was concluded that the concentration of oxygen vacancy was significantly reduced, giving rise to the homogeneity improvement. Moreover, we have shown an explanation for the dielectric breakdown in terms of oxygen transport in the Hf-based dielectric film.

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Tight distribution of dielectric characteristics of HfSiON in metal gate devices

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