@inproceedings{c0baa89df0fa44a8904cedbc28160ce3,
title = "Tight distribution of dielectric characteristics of HfSiON in metal gate devices",
abstract = "Leakage current characteristics with significantly reduced dispersion were achieved for HfSiON gate dielectric film by selecting TiN gate electrode with low reactivity, compared to the conventional poly-Si gate. The breakdown lifetime and its characteristic homogeneity were also enormously improved. With intensive study on these electrical characteristics, it was concluded that the concentration of oxygen vacancy was significantly reduced, giving rise to the homogeneity improvement. Moreover, we have shown an explanation for the dielectric breakdown in terms of oxygen transport in the Hf-based dielectric film.",
author = "R. Hasunuma and T. Naito and C. Tamura and A. Uedono and K. Shiraishi and N. Umezawa and T. Chikyow and S. Inumiya and M. Sato and Y. Tamura and H. Watanabe and Y. Nara and Y. Ohji and S. Miyazaki and K. Yamada and K. Yamabe",
year = "2007",
doi = "10.1149/1.2779543",
language = "English",
isbn = "9781566775700",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "4",
pages = "3--11",
booktitle = "ECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks",
edition = "4",
note = "5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting ; Conference date: 08-10-2007 Through 10-10-2007",
}