Ti silicide electrodes low contact resistance for undoped AlGaN/GaN structure

K. Tsuneishi, J. Chen, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, H. Iwai

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    Current-voltage characteristics of Ti and TiSi2 electrodes on AlGaN/GaN structures have been characterized. Ti electrode has revealed annealing temperature dependent properties presumably due to excess reaction with AlGaN layer. Owing to inert properties of TiSi2, stable current-voltage characteristics have been obtained.

    Original languageEnglish
    Title of host publicationGallium Nitride and Silicon Carbide Power Technologies 2
    Pages447-450
    Number of pages4
    Edition3
    DOIs
    Publication statusPublished - 2012 Dec 1
    Event2nd Symposium on Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Technologies - ECS Fall 2012 Meeting - Honolulu, HI, United States
    Duration: 2012 Oct 72012 Oct 12

    Publication series

    NameECS Transactions
    Number3
    Volume50
    ISSN (Print)1938-5862
    ISSN (Electronic)1938-6737

    Other

    Other2nd Symposium on Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Technologies - ECS Fall 2012 Meeting
    CountryUnited States
    CityHonolulu, HI
    Period12/10/712/10/12

    ASJC Scopus subject areas

    • Engineering(all)

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  • Cite this

    Tsuneishi, K., Chen, J., Kakushima, K., Ahmet, P., Kataoka, Y., Nishiyama, A., Sugii, N., Tsutsui, K., Natori, K., Hattori, T., & Iwai, H. (2012). Ti silicide electrodes low contact resistance for undoped AlGaN/GaN structure. In Gallium Nitride and Silicon Carbide Power Technologies 2 (3 ed., pp. 447-450). (ECS Transactions; Vol. 50, No. 3). https://doi.org/10.1149/05003.0447ecst