Ti silicide electrodes low contact resistance for undoped AlGaN/GaN structure

K. Tsuneishi, J. Chen, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, H. Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Current-voltage characteristics of Ti and TiSi2 electrodes on AlGaN/GaN structures have been characterized. Ti electrode has revealed annealing temperature dependent properties presumably due to excess reaction with AlGaN layer. Owing to inert properties of TiSi2, stable current-voltage characteristics have been obtained.

Original languageEnglish
Title of host publicationGallium Nitride and Silicon Carbide Power Technologies 2
PublisherElectrochemical Society Inc.
Pages447-450
Number of pages4
Edition3
ISBN (Print)9781607683513
DOIs
Publication statusPublished - 2013
Externally publishedYes
Event2nd Symposium on Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Technologies - ECS Fall 2012 Meeting - Honolulu, HI, United States
Duration: 2012 Oct 72012 Oct 12

Publication series

NameECS Transactions
Number3
Volume50
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other2nd Symposium on Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Technologies - ECS Fall 2012 Meeting
Country/TerritoryUnited States
CityHonolulu, HI
Period12/10/712/10/12

ASJC Scopus subject areas

  • Engineering(all)

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