Through silicon via filling methods with metal/polymer composite for three-dimensional LSI

Barbara Horváth, Jin Kawakita, Toyohiro Chikyow

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)

Abstract

The novel use of metal/polymer composite can be a new candidate for filling through silicon vias (TSV) for three-dimensional (3D) LSI, as it provides a much faster and inexpensive fabrication process compared to copper electroplating. In this study, different process methods have been tested in order to optimize TSV filling with Ag/polypyrrole composite. All together nine method set-ups have been examined to analyse their average filling ratios. The statistical analysis of the techniques showed that the masking and scratching in vacuum environment proved to be the most effective, in average up to 98% filling ratio could be reached within 5min. The technological differences of the two techniques to remove the additional deposited composite material on the surface caused by the wet dipping in aspect of the resulting via fillings are also detailed in this paper. The use of these techniques can contribute to improve through-put for production of 3D-LSI with metal/polymer composites.

Original languageEnglish
Article number06JH01
JournalJapanese journal of applied physics
Volume53
Issue number6 SPEC. ISSUE
DOIs
Publication statusPublished - 2014 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Through silicon via filling methods with metal/polymer composite for three-dimensional LSI'. Together they form a unique fingerprint.

Cite this