Through Silicon photonic via (TSPV) with Si core for low loss and high-speed data transmission in opto-electronic 3-D LSI

Akihiro Noriki; Kang Wook Lee; Jichoel Bea; Takafumi Fukushima; Tetsu Tanaka; Mitsumasa Koyanagi

doi:10.1109/3DIC.2010.5751435

Through Silicon photonic via (TSPV) with Si core for low loss and high-speed data transmission in opto-electronic 3-D LSI

Akihiro Noriki, Kang Wook Lee, Jichoel Bea, Takafumi Fukushima, Tetsu Tanaka, Mitsumasa Koyanagi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

11 Citations (Scopus)

Abstract

To realize very high performance computing system, we have proposed a novel opto-electronic 3-D LSI in which both electrical and optical devices are integrated. For realizing such opto-electronic 3-D LSI, through Si photonic via (TSPV) is indispensable for vertical light transmission. In this work, we fabricated the TSPV comprising Si core and epoxy cladding. We measured near field patterns (NFP) of laser light passed through the TSPV to evaluate its light confinement effect. From the results of NFP measurement, we confirmed that the laser light was successfully confined and propagated in the Si core region of the TSPV. We successfully developed a fabrication process to form both the TSPV and TSV simultaneously. The size of the fabricated TSPV and TSV was 20μmx20μm and 16μmx16μm, respectively.

Original language	English
Title of host publication	IEEE 3D System Integration Conference 2010, 3DIC 2010
DOIs	https://doi.org/10.1109/3DIC.2010.5751435
Publication status	Published - 2010 Dec 1
Event	2nd IEEE International 3D System Integration Conference, 3DIC 2010 - Munich, Germany Duration: 2010 Nov 16 → 2010 Nov 18

Publication series

Name	IEEE 3D System Integration Conference 2010, 3DIC 2010

Other

Other	2nd IEEE International 3D System Integration Conference, 3DIC 2010
Country/Territory	Germany
City	Munich
Period	10/11/16 → 10/11/18

ASJC Scopus subject areas

Control and Systems Engineering

Access to Document

10.1109/3DIC.2010.5751435

Cite this

Noriki, A., Lee, K. W., Bea, J., Fukushima, T., Tanaka, T., & Koyanagi, M. (2010). Through Silicon photonic via (TSPV) with Si core for low loss and high-speed data transmission in opto-electronic 3-D LSI. In IEEE 3D System Integration Conference 2010, 3DIC 2010 [5751435] (IEEE 3D System Integration Conference 2010, 3DIC 2010). https://doi.org/10.1109/3DIC.2010.5751435

Through Silicon photonic via (TSPV) with Si core for low loss and high-speed data transmission in opto-electronic 3-D LSI. / Noriki, Akihiro; Lee, Kang Wook; Bea, Jichoel ; Fukushima, Takafumi ; Tanaka, Tetsu; Koyanagi, Mitsumasa.

IEEE 3D System Integration Conference 2010, 3DIC 2010. 2010. 5751435 (IEEE 3D System Integration Conference 2010, 3DIC 2010).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Noriki, A, Lee, KW, Bea, J , Fukushima, T , Tanaka, T & Koyanagi, M 2010, Through Silicon photonic via (TSPV) with Si core for low loss and high-speed data transmission in opto-electronic 3-D LSI. in IEEE 3D System Integration Conference 2010, 3DIC 2010., 5751435, IEEE 3D System Integration Conference 2010, 3DIC 2010, 2nd IEEE International 3D System Integration Conference, 3DIC 2010, Munich, Germany, 10/11/16. https://doi.org/10.1109/3DIC.2010.5751435

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abstract = "To realize very high performance computing system, we have proposed a novel opto-electronic 3-D LSI in which both electrical and optical devices are integrated. For realizing such opto-electronic 3-D LSI, through Si photonic via (TSPV) is indispensable for vertical light transmission. In this work, we fabricated the TSPV comprising Si core and epoxy cladding. We measured near field patterns (NFP) of laser light passed through the TSPV to evaluate its light confinement effect. From the results of NFP measurement, we confirmed that the laser light was successfully confined and propagated in the Si core region of the TSPV. We successfully developed a fabrication process to form both the TSPV and TSV simultaneously. The size of the fabricated TSPV and TSV was 20μmx20μm and 16μmx16μm, respectively.",

author = "Akihiro Noriki and Lee, {Kang Wook} and Jichoel Bea and Takafumi Fukushima and Tetsu Tanaka and Mitsumasa Koyanagi",

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AU - Fukushima, Takafumi

AU - Tanaka, Tetsu

AU - Koyanagi, Mitsumasa

PY - 2010/12/1

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N2 - To realize very high performance computing system, we have proposed a novel opto-electronic 3-D LSI in which both electrical and optical devices are integrated. For realizing such opto-electronic 3-D LSI, through Si photonic via (TSPV) is indispensable for vertical light transmission. In this work, we fabricated the TSPV comprising Si core and epoxy cladding. We measured near field patterns (NFP) of laser light passed through the TSPV to evaluate its light confinement effect. From the results of NFP measurement, we confirmed that the laser light was successfully confined and propagated in the Si core region of the TSPV. We successfully developed a fabrication process to form both the TSPV and TSV simultaneously. The size of the fabricated TSPV and TSV was 20μmx20μm and 16μmx16μm, respectively.

AB - To realize very high performance computing system, we have proposed a novel opto-electronic 3-D LSI in which both electrical and optical devices are integrated. For realizing such opto-electronic 3-D LSI, through Si photonic via (TSPV) is indispensable for vertical light transmission. In this work, we fabricated the TSPV comprising Si core and epoxy cladding. We measured near field patterns (NFP) of laser light passed through the TSPV to evaluate its light confinement effect. From the results of NFP measurement, we confirmed that the laser light was successfully confined and propagated in the Si core region of the TSPV. We successfully developed a fabrication process to form both the TSPV and TSV simultaneously. The size of the fabricated TSPV and TSV was 20μmx20μm and 16μmx16μm, respectively.

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Through Silicon photonic via (TSPV) with Si core for low loss and high-speed data transmission in opto-electronic 3-D LSI

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