Threshold voltage controlled by gate area and gate recess in inverted trapezoidal trigate AlGaN/GaN MOS high-electron-mobility transistors with photoenhanced chemical and plasma-enhanced atomic layer deposition oxides
Po Chun Yeh, Yun Wei Lin, Yue Lin Huang, Jui Hung Hung, Bo Ren Lin, Lucas Yang, Cheng Han Wu, Tzu Kuan Wu, Chao Hsin Wu, Lung Han Peng
Research output: Contribution to journal › Article › peer-review
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