Threshold voltage control in dinaphthothienothiophene-based organic transistors by plasma treatment: Toward their application to logic circuits

Asahi Kitani, Yoshinari Kimura, Masatoshi Kitamura, Yasuhiko Arakawa

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

The threshold voltage in p-channel organic thin-film transistors (TFTs) having dinaphthothienothiophene as a channel material has been investigated toward their applicability to logic circuits. Oxygen plasma treatment of the gate dielectric surface was carried out to control the threshold voltage. The threshold voltage changed in the range from %6.4 to 9.4V, depenDing on plasma treatment time and the thickness of the gate dielectric. The surface charge after plasma treatment was estimated from the dependence of the threshold voltage. Operation of logic inverters consisting of TFTs with different threshold voltages was demonstrated as an application of TFTs with controlled threshold voltage.

Original languageEnglish
Article number03DC03
JournalJapanese journal of applied physics
Volume55
Issue number3
DOIs
Publication statusPublished - 2016 Mar
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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