Threshold behavior of photoinduced plasmon-resonant self-oscillation in a new interdigitated grating gates device

Yahya Moubarak Meziani, Mitsuhiro Hanabe, Taiichi Otsuji, Eiichi Sano

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The new doubly interdigitated grating gate high-electron-mobility transistor (HEMT) has been subjected at room temperature to a 1.5 μm cw laser beam. The observed photoresponse shows a threshold behavior as a function of drain-to-source bias for different gate voltages. The result was interpreted as a clear signature of the self-oscillation of plasma waves.

Original languageEnglish
Pages (from-to)2409-2412
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume46
Issue number4 B
DOIs
Publication statusPublished - 2007 Apr 24

Keywords

  • Grating gate
  • HEMT
  • Photomixer
  • Plasma wave
  • Terahertz radiations

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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