TY - GEN
T1 - Three-terminal spintronics memory devices with perpendicular anisotropy
AU - Ohno, H.
AU - Fukami, S.
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2015/7/14
Y1 - 2015/7/14
N2 - The focus of spintronics memory device that constitutes MRAM has so far been largely on two-terminal magnetic tunnel junction with spin-transfer torque magnetization switching, because of its superior area efficiency. In a number of cases, however, where switching speed and relaxed control of parameters are more preferred than the reduced area, three-terminal spintronics device is an equally, if not more, attractive alternative. Here 'three-terminal' refers to the number of terminals used for read and write operations. This configuration allows realizing high-speed and high-reliability device operation, suitable for replacement of semiconductor-based working memories such as SRAMs but with nonvolatility and reduced area to overcome issues of scaling limit and increasing power consumption [1]. Two types of three-terminal devices are currently under development; one utilizes a current-induced domain wall (DW) motion and the other a spin-orbit torque (SOT) induced magnetization switching for their write operation. Here we review and compare their basic operation principles and the technological prospects.
AB - The focus of spintronics memory device that constitutes MRAM has so far been largely on two-terminal magnetic tunnel junction with spin-transfer torque magnetization switching, because of its superior area efficiency. In a number of cases, however, where switching speed and relaxed control of parameters are more preferred than the reduced area, three-terminal spintronics device is an equally, if not more, attractive alternative. Here 'three-terminal' refers to the number of terminals used for read and write operations. This configuration allows realizing high-speed and high-reliability device operation, suitable for replacement of semiconductor-based working memories such as SRAMs but with nonvolatility and reduced area to overcome issues of scaling limit and increasing power consumption [1]. Two types of three-terminal devices are currently under development; one utilizes a current-induced domain wall (DW) motion and the other a spin-orbit torque (SOT) induced magnetization switching for their write operation. Here we review and compare their basic operation principles and the technological prospects.
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U2 - 10.1109/INTMAG.2015.7157427
DO - 10.1109/INTMAG.2015.7157427
M3 - Conference contribution
AN - SCOPUS:84942475430
T3 - 2015 IEEE International Magnetics Conference, INTERMAG 2015
BT - 2015 IEEE International Magnetics Conference, INTERMAG 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2015 IEEE International Magnetics Conference, INTERMAG 2015
Y2 - 11 May 2015 through 15 May 2015
ER -