Three-terminal spintronics memory devices with perpendicular anisotropy

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The focus of spintronics memory device that constitutes MRAM has so far been largely on two-terminal magnetic tunnel junction with spin-transfer torque magnetization switching, because of its superior area efficiency. In a number of cases, however, where switching speed and relaxed control of parameters are more preferred than the reduced area, three-terminal spintronics device is an equally, if not more, attractive alternative. Here 'three-terminal' refers to the number of terminals used for read and write operations. This configuration allows realizing high-speed and high-reliability device operation, suitable for replacement of semiconductor-based working memories such as SRAMs but with nonvolatility and reduced area to overcome issues of scaling limit and increasing power consumption [1]. Two types of three-terminal devices are currently under development; one utilizes a current-induced domain wall (DW) motion and the other a spin-orbit torque (SOT) induced magnetization switching for their write operation. Here we review and compare their basic operation principles and the technological prospects.

Original languageEnglish
Title of host publication2015 IEEE International Magnetics Conference, INTERMAG 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479973224
DOIs
Publication statusPublished - 2015 Jul 14
Event2015 IEEE International Magnetics Conference, INTERMAG 2015 - Beijing, China
Duration: 2015 May 112015 May 15

Publication series

Name2015 IEEE International Magnetics Conference, INTERMAG 2015

Other

Other2015 IEEE International Magnetics Conference, INTERMAG 2015
Country/TerritoryChina
CityBeijing
Period15/5/1115/5/15

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering
  • Surfaces, Coatings and Films

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