Three-terminal magnetic tunneling junction device with perpendicular anisotropy CoFeB sensing layer

H. Honjo, S. Fukami, K. Ishihara, R. Nebashi, K. Kinoshita, K. Tokutome, M. Murahata, S. Miura, N. Sakimura, T. Sugibayashi, N. Kasai, H. Ohno

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6 Citations (Scopus)

Abstract

We demonstrated read and write characteristics of a three terminal memory device with a perpendicular anisotropy-free layer of a strip of [Co/Ni] and a low-switching perpendicular-anisotropy CoFeB/MgO sensing layer. This new design of the cell results in a small cell area. The switching magnetic field of the sensing layer can be decreased by changing sputtering gas for the Ta-cap from Ar to Kr. An electron energy-loss spectroscopy analysis of the cross-section of the magnetic tunneling junction (MTJ) revealed that the boron content in CoFeB with a Kr-sputtered Ta-cap was smaller than that with an Ar-sputtered one. A change in resistance for the MTJ was observed that corresponded to the magnetic switching of the Co/Ni wire and its magnetoresistance ratio and critical current were 90% and 0.8mA, respectively.

Original languageEnglish
Article number17B750
JournalJournal of Applied Physics
Volume115
Issue number17
DOIs
Publication statusPublished - 2014 May 7

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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