Three terminal magnetic tunnel junction utilizing the spin Hall effect of iridium-doped copper

Michihiko Yamanouchi, Lin Chen, Junyeon Kim, Masamitsu Hayashi, Hideo Sato, Shunsuke Fukami, Shoji Ikeda, Fumihiro Matsukura, Hideo Ohno

Research output: Contribution to journalArticlepeer-review

76 Citations (Scopus)

Abstract

We show a three terminal magnetic tunnel junction (MTJ) with a 10-nm thick channel based on an interconnection material Cu with 10% Ir doping. By applying a current density of less than 1012 A m-2 to the channel, depending on the current direction, switching of a MTJ defined on the channel takes place. We show that spin transfer torque (STT) plays a critical role in determining the threshold current. By assuming the spin Hall effect in the channel being the source of the STT, the lower bound of magnitude of the spin Hall angle is evaluated to be 0.03.

Original languageEnglish
Article number212408
JournalApplied Physics Letters
Volume102
Issue number21
DOIs
Publication statusPublished - 2013

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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