Three-step room temperature wet cleaning process for silicon substrate

Rui Hasebe, Akinobu Teramoto, Tomoyuki Suwa, Rihito Kuroda, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

With a progress of device dimension miniaturization, an ultraclean wafer surface is continuously increasing its importance crucial for high quality processing in Silicon Technologies [1]-[8]. Cleaning of silicon wafer surface has been accomplished by RCA wet cleaning in the past [9], where there exists high temperature processes consisting of H2SO4/H2O2/H2O, NH4OH/H2O2/H2O and HCl/H2O2/H2O treatments. Thus, RCA cleaning requires a large number of processing steps, resulting in the consumption of a huge volume of liquid chemicals and UPW, and simultaneously consuming a large volume of clean air exhaust to suppress chemical vapor from getting into the clean room. Moreover, RCA cleaning is used at high temperature and contain alkali solutions, which increase the roughness of the silicon wafer surface [10].

Original languageEnglish
Title of host publicationUltra Clean Processing of Semiconductor Surfaces IX
Subtitle of host publicationUCPSS 2008
PublisherTrans Tech Publications Ltd
Pages189-192
Number of pages4
ISBN (Print)3908451647, 9783908451648
DOIs
Publication statusPublished - 2009
Event9th international symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2008 - Bruges, Belgium
Duration: 2008 Sep 222008 Sep 24

Publication series

NameSolid State Phenomena
Volume145-146
ISSN (Print)1012-0394

Other

Other9th international symposium on Ultra Clean Processing of Semiconductor Surfaces, UCPSS 2008
CountryBelgium
CityBruges
Period08/9/2208/9/24

Keywords

  • Alkali free
  • Cleaning
  • Room temperature
  • TDS-APIMS

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

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