Three-dimensional organic field-effect transistors with high output current and high on-off ratio

Mayumi Uno, I. Doi, K. Takimiya, J. Takeya

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

High-performance three-dimensional organic field-effect transistors are developed with multiple vertical channels of organic semiconductors. Advanced processes of vacuum depositing high-mobility and air-stable dinaphtho[2,3-b: 2′, 3′ -f]thieno[3,2-b]thiophene thin films on a series of horizontally elongated vertical walls have maximized the output current to 0.60 A/ cm2 area with the application of -10 V for both drain-source and gate voltages. The on-off ratio is as high as 106. Carrier mobility of the organic semiconductor is typically 0.30 cm2 /V s and deviation among ten devices is within 10%. The performance meets requirement for such application as driving organic light-emitting diodes in active-matrix displays.

Original languageEnglish
Article number103307
JournalApplied Physics Letters
Volume94
Issue number10
DOIs
Publication statusPublished - 2009 Mar 24
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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