High-performance three-dimensional organic field-effect transistors are developed with multiple vertical channels of organic semiconductors. Advanced processes of vacuum depositing high-mobility and air-stable dinaphtho[2,3-b: 2′, 3′ -f]thieno[3,2-b]thiophene thin films on a series of horizontally elongated vertical walls have maximized the output current to 0.60 A/ cm2 area with the application of -10 V for both drain-source and gate voltages. The on-off ratio is as high as 106. Carrier mobility of the organic semiconductor is typically 0.30 cm2 /V s and deviation among ten devices is within 10%. The performance meets requirement for such application as driving organic light-emitting diodes in active-matrix displays.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)