Three dimensional numerical simulation of nucleation of diamond by considering surface pretreatment of substrate

Tomoo Kayaba, Takeshi Mizukami, Masumi Saka, Hiroyuki Abe

Research output: Contribution to journalArticlepeer-review

Abstract

In order to solve the effect of the surface pretreatment of a substrate on nucleation, three dimensional numerical simulation of the nucleation of diamond on silicon substrate by the CVD method was conducted. Diamond thin film has been guessed to be connected to the substrate by the nuclei grown at the beginning of deposition. In fabricating of diamond thin film, it is important to understand the number of nuclei, namely, nucleation density. The fact that nucleation density on a pretreated substrate is much higher than that on substrate without pretreatment is known empirically. In this paper, a three dimensional nucleation model that consists of a pretreated silicon substrate and reaction gas was proposed. Scarring on the surface of the substrate introduced by surface pretreatment was modeled by a V-shaped notch having two point defects. The model was verified by performing three dimensional numerical simulation of nucleation.

Original languageEnglish
Pages (from-to)1369-1374
Number of pages6
JournalNihon Kikai Gakkai Ronbunshu, A Hen/Transactions of the Japan Society of Mechanical Engineers, Part A
Volume64
Issue number621
DOIs
Publication statusPublished - 1998

Keywords

  • CVD
  • Computational mechanics
  • Diamond thin film
  • Molecular dynamics
  • Notch
  • Nucleation
  • Silicon substrate

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Three dimensional numerical simulation of nucleation of diamond by considering surface pretreatment of substrate'. Together they form a unique fingerprint.

Cite this