Abstract
In order to solve the effect of the surface pretreatment of a substrate on nucleation, three dimensional numerical simulation of the nucleation of diamond on silicon substrate by the CVD method was conducted. Diamond thin film has been guessed to be connected to the substrate by the nuclei grown at the beginning of deposition. In fabricating of diamond thin film, it is important to understand the number of nuclei, namely, nucleation density. The fact that nucleation density on a pretreated substrate is much higher than that on substrate without pretreatment is known empirically. In this paper, a three dimensional nucleation model that consists of a pretreated silicon substrate and reaction gas was proposed. Scarring on the surface of the substrate introduced by surface pretreatment was modeled by a V-shaped notch having two point defects. The model was verified by performing three dimensional numerical simulation of nucleation.
| Original language | English |
|---|---|
| Pages (from-to) | 1369-1374 |
| Number of pages | 6 |
| Journal | Nihon Kikai Gakkai Ronbunshu, A Hen/Transactions of the Japan Society of Mechanical Engineers, Part A |
| Volume | 64 |
| Issue number | 621 |
| DOIs | |
| Publication status | Published - 1998 |
Keywords
- CVD
- Computational mechanics
- Diamond thin film
- Molecular dynamics
- Notch
- Nucleation
- Silicon substrate
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering