Three-dimensional islands of Si and Ge formed on SiO2 through crystallization and agglomeration from amorphous thin films

Yutaka Wakayama, Takashi Tagami, Shunichiro Tanaka

Research output: Contribution to journalArticle

44 Citations (Scopus)

Abstract

The crystallization process was examined for amorphous thin films of silicon (a-Si) and germanium (a-Ge) on quartz glass (SiO2) substrate. Three-dimensional crystalline islands were formed through crystallization and agglomeration. These islands indicated a bimodal size distribution. The mechanism of crystalline island (c-Si, c-Ge) formation was discussed on the basis of thermodynamics. In studying the crystallization of the thin films, the influence of the film-substrate interfacial energy should be taken into consideration. It was found that the thickness of the as-deposited amorphous films is an essential factor in determining the crystallization behavior and in controlling island size. Above all, a high size uniformity of crystalline islands could be obtained under moderate thermal annealing conditions.

Original languageEnglish
Pages (from-to)300-307
Number of pages8
JournalThin Solid Films
Volume350
Issue number1
DOIs
Publication statusPublished - 1999 Aug 15
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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