Three-dimensional integration technology using through-si via based on reconfigured wafer-to-wafer bonding

Mitsumasa Koyanagi, Takafumi Fukushima, Tetsu Tanaka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Three-dimensional (3-D) integration technologies using through-silicon vias (TSV's) are described. We have developed a 3-D integration technology using TSV's based on a wafer-to-wafer bonding method for the fabrication of new 3-D LSIs. A 3-D image sensor chip, 3-D shared memory chip, 3-D artificial retina chip and 3-D microprocessor test chip have been fabricated by using this technology. In addition, we have developed a new 3-D integration technology based on a reconfigured wafer-to-wafer bonding method called a super-chip integration. A number of known good dies (KGDs) are simultaneously aligned and bonded onto lower chips or wafers with high alignment accuracy by using a new self-assembly technique in a super-chip integration.

Original languageEnglish
Title of host publicationIEEE Custom Integrated Circuits Conference 2010, CICC 2010
DOIs
Publication statusPublished - 2010 Dec 13
Event32nd Annual Custom Integrated Circuits Conference - The Showcase for Circuit Design in the Heart of Silicon Valley, CICC 2010 - San Jose, CA, United States
Duration: 2010 Sep 192010 Sep 22

Publication series

NameProceedings of the Custom Integrated Circuits Conference
ISSN (Print)0886-5930

Other

Other32nd Annual Custom Integrated Circuits Conference - The Showcase for Circuit Design in the Heart of Silicon Valley, CICC 2010
CountryUnited States
CitySan Jose, CA
Period10/9/1910/9/22

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Koyanagi, M., Fukushima, T., & Tanaka, T. (2010). Three-dimensional integration technology using through-si via based on reconfigured wafer-to-wafer bonding. In IEEE Custom Integrated Circuits Conference 2010, CICC 2010 [5617626] (Proceedings of the Custom Integrated Circuits Conference). https://doi.org/10.1109/CICC.2010.5617626