Three-dimensional integrated CMOS image sensors with pixel-parallel A/D converters fabricated by direct bonding of SOI layers

Masahide Goto; Kei Hagiwara; Yoshinori Iguchi; Hiroshi Ohtake; Takuya Saraya; Masaharu Kobayashi; Eiji Higurashi; Hiroshi Toshiyoshi; Toshiro Hiramoto

doi:10.1109/IEDM.2014.7046980

Three-dimensional integrated CMOS image sensors with pixel-parallel A/D converters fabricated by direct bonding of SOI layers

Masahide Goto, Kei Hagiwara, Yoshinori Iguchi, Hiroshi Ohtake, Takuya Saraya, Masaharu Kobayashi, Eiji Higurashi, Hiroshi Toshiyoshi, Toshiro Hiramoto

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

11 Citations (Scopus)

Abstract

We report the first demonstration of three-dimensional (3D) integrated CMOS image sensors with pixel-parallel A/D converters (ADCs). Photodiode (PD) and inverter layers were directly bonded with the damascened Au electrodes to provide each pixel with in-pixel A/D conversion. We designed ADC with a pulse frequency output and fabricated a prototype sensor with 64 pixels. The developed sensor successfully captured video images and confirmed excellent linearity with a wide dynamic range of more than 80 dB, which showed feasibility of pixel-level 3D integration for high-performance CMOS image sensors.

Original language	English
Title of host publication	2014 IEEE International Electron Devices Meeting, IEDM 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	4.2.1-4.2.4
Edition	February
ISBN (Electronic)	9781479980017
DOIs	https://doi.org/10.1109/IEDM.2014.7046980
Publication status	Published - 2015 Feb 20
Externally published	Yes
Event	2014 60th IEEE International Electron Devices Meeting, IEDM 2014 - San Francisco, United States Duration: 2014 Dec 15 → 2014 Dec 17

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Number	February
Volume	2015-February
ISSN (Print)	0163-1918

Other

Other	2014 60th IEEE International Electron Devices Meeting, IEDM 2014
Country/Territory	United States
City	San Francisco
Period	14/12/15 → 14/12/17

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.2014.7046980

Cite this

Goto, M., Hagiwara, K., Iguchi, Y., Ohtake, H., Saraya, T., Kobayashi, M., Higurashi, E., Toshiyoshi, H., & Hiramoto, T. (2015). Three-dimensional integrated CMOS image sensors with pixel-parallel A/D converters fabricated by direct bonding of SOI layers. In 2014 IEEE International Electron Devices Meeting, IEDM 2014 (February ed., pp. 4.2.1-4.2.4). [7046980] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2015-February, No. February). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2014.7046980

Three-dimensional integrated CMOS image sensors with pixel-parallel A/D converters fabricated by direct bonding of SOI layers. / Goto, Masahide; Hagiwara, Kei; Iguchi, Yoshinori et al.

2014 IEEE International Electron Devices Meeting, IEDM 2014. February. ed. Institute of Electrical and Electronics Engineers Inc., 2015. p. 4.2.1-4.2.4 7046980 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2015-February, No. February).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Goto, M, Hagiwara, K, Iguchi, Y, Ohtake, H, Saraya, T, Kobayashi, M, Higurashi, E, Toshiyoshi, H & Hiramoto, T 2015, Three-dimensional integrated CMOS image sensors with pixel-parallel A/D converters fabricated by direct bonding of SOI layers. in 2014 IEEE International Electron Devices Meeting, IEDM 2014. February edn, 7046980, Technical Digest - International Electron Devices Meeting, IEDM, no. February, vol. 2015-February, Institute of Electrical and Electronics Engineers Inc., pp. 4.2.1-4.2.4, 2014 60th IEEE International Electron Devices Meeting, IEDM 2014, San Francisco, United States, 14/12/15. https://doi.org/10.1109/IEDM.2014.7046980

Goto M, Hagiwara K, Iguchi Y, Ohtake H, Saraya T, Kobayashi M et al. Three-dimensional integrated CMOS image sensors with pixel-parallel A/D converters fabricated by direct bonding of SOI layers. In 2014 IEEE International Electron Devices Meeting, IEDM 2014. February ed. Institute of Electrical and Electronics Engineers Inc. 2015. p. 4.2.1-4.2.4. 7046980. (Technical Digest - International Electron Devices Meeting, IEDM; February). doi: 10.1109/IEDM.2014.7046980

Goto, Masahide ; Hagiwara, Kei ; Iguchi, Yoshinori et al. / Three-dimensional integrated CMOS image sensors with pixel-parallel A/D converters fabricated by direct bonding of SOI layers. 2014 IEEE International Electron Devices Meeting, IEDM 2014. February. ed. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 4.2.1-4.2.4 (Technical Digest - International Electron Devices Meeting, IEDM; February).

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Three-dimensional integrated CMOS image sensors with pixel-parallel A/D converters fabricated by direct bonding of SOI layers

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