TY - JOUR
T1 - Three-dimensional imaging of threading dislocations in GaN crystals using two-photon excitation photoluminescence
AU - Tanikawa, Tomoyuki
AU - Ohnishi, Kazuki
AU - Kanoh, Masaya
AU - Mukai, Takashi
AU - Matsuoka, Takashi
N1 - Funding Information:
Acknowledgments This work was partly supported by JSPS KAKENHI Grant Numbers JP16K18074 and JP17H05325. The experiments using a two-photon excitation microscope were carried out at the Graduate School of Biomedical Engineering, Tohoku University. We would like to thank Ms. Masako Ino and Mr. Hideo Saisho of Nikon Instech Co., Ltd. for instructing the operation of the two-photon microscope.
Publisher Copyright:
© 2018 The Japan Society of Applied Physics.
PY - 2018/3
Y1 - 2018/3
N2 - The three-dimensional imaging of threading dislocations in GaN films was demonstrated using two-photon excitation photoluminescence. The threading dislocations were shown as dark lines. The spatial resolutions near the surface were about 0.32 and 3.2 μm for the in-plane and depth directions, respectively. The threading dislocations with a density less than 108 cm%2 were resolved, although the aberration induced by the refractive index mismatch was observed. The decrease in threading dislocation density was clearly observed by increasing the GaN film thickness. This can be considered a novel method for characterizing threading dislocations in GaN films without any destructive preparations.
AB - The three-dimensional imaging of threading dislocations in GaN films was demonstrated using two-photon excitation photoluminescence. The threading dislocations were shown as dark lines. The spatial resolutions near the surface were about 0.32 and 3.2 μm for the in-plane and depth directions, respectively. The threading dislocations with a density less than 108 cm%2 were resolved, although the aberration induced by the refractive index mismatch was observed. The decrease in threading dislocation density was clearly observed by increasing the GaN film thickness. This can be considered a novel method for characterizing threading dislocations in GaN films without any destructive preparations.
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U2 - 10.7567/APEX.11.031004
DO - 10.7567/APEX.11.031004
M3 - Article
AN - SCOPUS:85044968016
SN - 1882-0778
VL - 11
JO - Applied Physics Express
JF - Applied Physics Express
IS - 3
M1 - 031004
ER -