Three-dimensional imaging of threading dislocations in GaN crystals using two-photon excitation photoluminescence

Tomoyuki Tanikawa, Kazuki Ohnishi, Masaya Kanoh, Takashi Mukai, Takashi Matsuoka

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

The three-dimensional imaging of threading dislocations in GaN films was demonstrated using two-photon excitation photoluminescence. The threading dislocations were shown as dark lines. The spatial resolutions near the surface were about 0.32 and 3.2 μm for the in-plane and depth directions, respectively. The threading dislocations with a density less than 108 cm%2 were resolved, although the aberration induced by the refractive index mismatch was observed. The decrease in threading dislocation density was clearly observed by increasing the GaN film thickness. This can be considered a novel method for characterizing threading dislocations in GaN films without any destructive preparations.

Original languageEnglish
Article number031004
JournalApplied Physics Express
Volume11
Issue number3
DOIs
Publication statusPublished - 2018 Mar

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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