Three-dimensional GaN nano-structure fabrication by focused ion beam chemical vapor deposition

T. Nagata, P. Ahmet, Y. Yamauchi, Y. Sakuma, T. Sekiguchi, T. Chikyow

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


We have demonstrated a position controlled GaN nano-structure fabrication by ion beam mediated growth methods. For this fabrication, we used two different methods. One is the "droplet epitaxy" which is a micro-crystal growth from Ga droplet followed by nitridation. By this method, the GaN micro-crystals in about 800 nm were found to be grown and cathode luminescence in broad wavelength (400-600 nm) were observed. Another one is the focused ion beam assisted chemical vapor deposition. Ga precursor gas and atomic N radicals impinged onto the surface simultaneously during the irradiation. By this method, the GaN nano-crystals of 200 nm × 100 nm block with 50 nm height was fabricated and strong near-band edge emission at 3.37 eV from GaN were observed. From the obtained results, ion beam assisted chemical vapor deposition proved to be a promising method to make GaN nano-crystal arrays.

Original languageEnglish
Pages (from-to)250-252
Number of pages3
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Issue number1-2
Publication statusPublished - 2006 Jan
Externally publishedYes


  • Focused ion beam
  • Nano-structures
  • Nitride
  • Nucleation
  • Semiconducting III-V materials

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation


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