TY - JOUR
T1 - Three-dimensional GaN nano-structure fabrication by focused ion beam chemical vapor deposition
AU - Nagata, T.
AU - Ahmet, P.
AU - Yamauchi, Y.
AU - Sakuma, Y.
AU - Sekiguchi, T.
AU - Chikyow, T.
N1 - Funding Information:
This research was partially supported by COMET-NIMS (Combinatorial Material Exploration and Technology).
PY - 2006/1
Y1 - 2006/1
N2 - We have demonstrated a position controlled GaN nano-structure fabrication by ion beam mediated growth methods. For this fabrication, we used two different methods. One is the "droplet epitaxy" which is a micro-crystal growth from Ga droplet followed by nitridation. By this method, the GaN micro-crystals in about 800 nm were found to be grown and cathode luminescence in broad wavelength (400-600 nm) were observed. Another one is the focused ion beam assisted chemical vapor deposition. Ga precursor gas and atomic N radicals impinged onto the surface simultaneously during the irradiation. By this method, the GaN nano-crystals of 200 nm × 100 nm block with 50 nm height was fabricated and strong near-band edge emission at 3.37 eV from GaN were observed. From the obtained results, ion beam assisted chemical vapor deposition proved to be a promising method to make GaN nano-crystal arrays.
AB - We have demonstrated a position controlled GaN nano-structure fabrication by ion beam mediated growth methods. For this fabrication, we used two different methods. One is the "droplet epitaxy" which is a micro-crystal growth from Ga droplet followed by nitridation. By this method, the GaN micro-crystals in about 800 nm were found to be grown and cathode luminescence in broad wavelength (400-600 nm) were observed. Another one is the focused ion beam assisted chemical vapor deposition. Ga precursor gas and atomic N radicals impinged onto the surface simultaneously during the irradiation. By this method, the GaN nano-crystals of 200 nm × 100 nm block with 50 nm height was fabricated and strong near-band edge emission at 3.37 eV from GaN were observed. From the obtained results, ion beam assisted chemical vapor deposition proved to be a promising method to make GaN nano-crystal arrays.
KW - Focused ion beam
KW - Nano-structures
KW - Nitride
KW - Nucleation
KW - Semiconducting III-V materials
UR - http://www.scopus.com/inward/record.url?scp=28544447246&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=28544447246&partnerID=8YFLogxK
U2 - 10.1016/j.nimb.2005.08.130
DO - 10.1016/j.nimb.2005.08.130
M3 - Article
AN - SCOPUS:28544447246
VL - 242
SP - 250
EP - 252
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
SN - 0168-583X
IS - 1-2
ER -