Three-dimensional evaluation of gettering ability of Σ 3 {111} grain boundaries in silicon by atom probe tomography combined with transmission electron microscopy

Yutaka Ohno, Kaihei Inoue, Yuki Tokumoto, Kentaro Kutsukake, Ichiro Yonenaga, Naoki Ebisawa, Hisashi Takamizawa, Yasuo Shimizu, Koji Inoue, Yasuyoshi Nagai, Hideto Yoshida, Seiji Takeda

Research output: Contribution to journalArticlepeer-review

24 Citations (Scopus)

Abstract

Three-dimensional distribution of impurities (boron, phosphorus, oxygen, and copper) at Σ 3 { 111 } grain boundaries was determined in a Czochralski-grown silicon single crystal by laser-assisted atom probe tomography (APT) combined with transmission electron microscopy, with a detection limit as low as the order of 0.001 at. %. The location of a boundary was determined by APT even when the boundary was not contaminated. Unlike the boundaries in multicrystalline silicon grown by the casting method, the impurities did not segregate at the boundaries even when the impurity concentrations were high. The gettering ability of the boundaries was discussed.

Original languageEnglish
Article number102102
JournalApplied Physics Letters
Volume103
Issue number10
DOIs
Publication statusPublished - 2013 Sep 2

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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