Three-dimensional evaluation of gettering ability for oxygen atoms at small-angle tilt boundaries in Czochralski-grown silicon crystals

Yutaka Ohno, Kaihei Inoue, Kozo Fujiwara, Momoko Deura, Kentaro Kutsukake, Ichiro Yonenaga, Yasuo Shimizu, Koji Inoue, Naoki Ebisawa, Yasuyoshi Nagai

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9 Citations (Scopus)

Abstract

Three-dimensional distribution of oxygen atoms at small-angle tilt boundaries (SATBs) in Czochralski-grown p-type silicon ingots was investigated by atom probe tomography combined with transmission electron microscopy. Oxygen gettering along edge dislocations composing SATBs, post crystal growth, was observed. The gettering ability of SATBs would depend both on the dislocation strain and on the dislocation density. Oxygen atoms would agglomerate in the atomic sites under the tensile hydrostatic stress larger than about 2.0 GPa induced by the dislocations. It was suggested that the density of the atomic sites, depending on the tilt angle of SATBs, determined the gettering ability of SATBs.

Original languageEnglish
Article number251603
JournalApplied Physics Letters
Volume106
Issue number25
DOIs
Publication statusPublished - 2015 Jun 22

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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