Three-dimensional elemental analysis of commercial 45nm Node Device with High-k/Metal gate stack by atom probe tomography

Koji Inoue, Hisashi Takamizawa, Katsuyuki Kitamoto, Jun Kato, Takahiro Miyagi, Yoshitsugu Nakagawa, Naohiko Kawasaki, Naoyuki Sugiyama, Hideki Hashimoto, Yasuo Shimizu, Takeshi Toyama, Yasuyoshi Nagai, Akiya Karen

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

Laser-assisted atom probe tomography (APT) was successfully applied to analyze the elemental distributions in a high-k/metal gate stack of a commercially available 45nm node real device. APT revealed the multilayer structure of the high-k/metal gate stack with nearly atomic-scale resolution, and successfully detected small amounts of Zr in the thin layer of high-k HfO2 dielectrics and H in the Ti layer of the metal gate. The present results demonstrate the usefulness of APT as a tool of elemental analysis in nanoscale multilayer device structures.

Original languageEnglish
Article number116601
JournalApplied Physics Express
Volume4
Issue number11
DOIs
Publication statusPublished - 2011 Nov 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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