TY - JOUR
T1 - Three-dimensional characterization of deuterium implanted in silicon using atom probe tomography
AU - Takamizawa, Hisashi
AU - Hoshi, Katsuya
AU - Shimizu, Yasuo
AU - Yano, Fumiko
AU - Inoue, Koji
AU - Nagata, Shinji
AU - Shikama, Tatsuo
AU - Nagai, Yasuyoshi
PY - 2013/6
Y1 - 2013/6
N2 - Although characterization of hydrogen (H) in silicon (Si) is of interest from a device physics viewpoint, this is difficult using conventional analytical methods. In this study, deuterium (D) was used as a proxy for H, and the distribution of implanted D-ions in Si(100) was investigated using atom probe tomography (APT). D can be distinguished from the residual H gas in the APT chamber. The APT results indicated that D tended to form clusters, whose distribution was similar to that of {311} defects identified using transmission electron microscopy, suggesting that the D ions segregate in the vicinity of these defects.
AB - Although characterization of hydrogen (H) in silicon (Si) is of interest from a device physics viewpoint, this is difficult using conventional analytical methods. In this study, deuterium (D) was used as a proxy for H, and the distribution of implanted D-ions in Si(100) was investigated using atom probe tomography (APT). D can be distinguished from the residual H gas in the APT chamber. The APT results indicated that D tended to form clusters, whose distribution was similar to that of {311} defects identified using transmission electron microscopy, suggesting that the D ions segregate in the vicinity of these defects.
UR - http://www.scopus.com/inward/record.url?scp=84880901405&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84880901405&partnerID=8YFLogxK
U2 - 10.7567/APEX.6.066602
DO - 10.7567/APEX.6.066602
M3 - Article
AN - SCOPUS:84880901405
VL - 6
JO - Applied Physics Express
JF - Applied Physics Express
SN - 1882-0778
IS - 6
M1 - 066602
ER -