Three-dimensional characterization of deuterium implanted in silicon using atom probe tomography

Hisashi Takamizawa, Katsuya Hoshi, Yasuo Shimizu, Fumiko Yano, Koji Inoue, Shinji Nagata, Tatsuo Shikama, Yasuyoshi Nagai

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)

Abstract

Although characterization of hydrogen (H) in silicon (Si) is of interest from a device physics viewpoint, this is difficult using conventional analytical methods. In this study, deuterium (D) was used as a proxy for H, and the distribution of implanted D-ions in Si(100) was investigated using atom probe tomography (APT). D can be distinguished from the residual H gas in the APT chamber. The APT results indicated that D tended to form clusters, whose distribution was similar to that of {311} defects identified using transmission electron microscopy, suggesting that the D ions segregate in the vicinity of these defects.

Original languageEnglish
Article number066602
JournalApplied Physics Express
Volume6
Issue number6
DOIs
Publication statusPublished - 2013 Jun

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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