Thin germanium dioxide film with a high quality interface formed in a direct neutral beam oxidation process

Akira Wada, Seiji Samukawa, Rui Zhang, Shinichi Takagi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Germanium dioxide (GeO2) thin film with a high-quality interface was directly formed by using a damage-free and low-temperature neutral beam oxidation (NBO) process. GeO2 film with little suboxide could be formed even at a low substrate temperature of 300°C because of the extremely low activation energy (Ea) oxidation resulting from bombardment with energetic oxygen neutral-beams of 5 eV. A high-quality GeO2/Ge interface with an low interface state density (Dit) of less than 1 × 1011 cm2eV1 was created by combining the NBO process with a hydrogen (H) radical native oxide removal treatment.

Original languageEnglish
Title of host publication2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012
Pages85-88
Number of pages4
DOIs
Publication statusPublished - 2012 Dec 11
Event42nd European Solid-State Device Research Conference, ESSDERC 2012 - Bordeaux, France
Duration: 2012 Sep 172012 Sep 21

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Other

Other42nd European Solid-State Device Research Conference, ESSDERC 2012
CountryFrance
CityBordeaux
Period12/9/1712/9/21

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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    Wada, A., Samukawa, S., Zhang, R., & Takagi, S. (2012). Thin germanium dioxide film with a high quality interface formed in a direct neutral beam oxidation process. In 2012 Proceedings of the European Solid-State Device Research Conference, ESSDERC 2012 (pp. 85-88). [6343339] (European Solid-State Device Research Conference). https://doi.org/10.1109/ESSDERC.2012.6343339