Thin-film transistors fabricated from semiconductor-enriched single-wall carbon nanotubes

Shunjiro Fujii, Takeshi Tanaka, Yasumitsu Miyata, Hiroshi Suga, Yasuhisa Naitoh, Takeo Minari, Tetsuhiko Miyadera, Kazuhito Tsukagoshi, Hiromichi Kataura

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Solution-processed thin-film transistors (TFTs) were fabricated from semiconductor-enriched single-wall carbon nanotubes (SWCNTs). By coating with a self-assembled monolayer of aminosilanes, one drop of SWCNT solution produced a uniform SWCNT random network on a SiO2/Si substrate. Thin films prepared by this method were used to fabricate SWCNT-TFTs and high-yield fabrication and stable transfer characteristics were achieved. We prepared three types of TFTs from pristine, metal-enriched, and semiconductorenriched SWCNTs. All TFTs fabricated from semiconductorenriched SWCNTs exhibited on/off ratios greater than 104, whereas the other TFTs had much lower on/off ratios. This result clearly demonstrates the advantage of using semiconductor-enriched SWCNTs for device applications and is expected to lead to integrated circuits made from SWCNTs in the near future.

Original languageEnglish
Pages (from-to)2849-2852
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume246
Issue number11-12
DOIs
Publication statusPublished - 2009 Dec
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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