Thin-film transistors fabricated by low-temperature process based on Ga- and Zn-free amorphous oxide semiconductor

Shinya Aikawa, Peter Darmawan, Keiichi Yanagisawa, Toshihide Nabatame, Yoshiyuki Abe, Kazuhito Tsukagoshi

Research output: Contribution to journalArticlepeer-review

60 Citations (Scopus)

Abstract

We propose the use of indium tungsten oxide (IWO) as a channel material for thin-film transistors (TFTs). In the present study, an IWO film was deposited at room temperature by means of DC magnetron sputtering and then annealed at 100 °C in N2 prior to formation of Au source and drain electrodes. Analysis using X-ray diffraction and transmission electron microscopy revealed that the film remained amorphous even after the post-deposition annealing treatment. TFTs fabricated using a Si substrate as a back-gate electrode showed good performance, with a saturation field-effect mobility of 19.3 cm2 · V-1 · s-1, an on/off current ratio of 8.9 × 109.

Original languageEnglish
Article number102101
JournalApplied Physics Letters
Volume102
Issue number10
DOIs
Publication statusPublished - 2013 Mar 11
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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