Thin-film stabilization of LiNbO                         3                         -type ZnSnO                         3                          and MgSnO                         3                          by molecular-beam epitaxy

Kohei Fujiwara; Hiroya Minato; Junichi Shiogai; Akihito Kumamoto; Naoya Shibata; Atsushi Tsukazaki

doi:10.1063/1.5054289

Thin-film stabilization of LiNbO ₃ -type ZnSnO ₃ and MgSnO ₃ by molecular-beam epitaxy

Kohei Fujiwara, Hiroya Minato, Junichi Shiogai, Akihito Kumamoto, Naoya Shibata, Atsushi Tsukazaki

Materials Property Division

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

In polar crystals, cooperative ionic displacement produces a macroscopic spontaneous polarization. Among such polar materials, LiNbO ₃ -type wide bandgap oxides are particularly appealing because they offer useful ferroelectric properties and also potentially lead to multiferroic materials. Using molecular-beam epitaxy, we investigated the thin-film growth of high-pressure phase LiNbO ₃ -type ZnSnO ₃ and discovered a polar oxide candidate, MgSnO ₃ . We found that LiNbO ₃ -type substrates play an essential role in the crystallization of these compounds, though corundum-type Al ₂ O ₃ substrates also have the identical crystallographic arrangement of oxygen sublattice. Optical transmittance and electrical transport measurements revealed their potential as a transparent conducting oxide. Establishment of a thin-film synthetic route would be the basis for exploration of functional polar oxides and research on conduction at ferroelectric interfaces and domain walls.

Original language	English
Article number	022505
Journal	APL Materials
Volume	7
Issue number	2
DOIs	https://doi.org/10.1063/1.5054289
Publication status	Published - 2019 Feb 1

ASJC Scopus subject areas

Materials Science(all)
Engineering(all)

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10.1063/1.5054289

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Fujiwara, K., Minato, H., Shiogai, J., Kumamoto, A., Shibata, N., & Tsukazaki, A. (2019). Thin-film stabilization of LiNbO ₃ -type ZnSnO ₃ and MgSnO ₃ by molecular-beam epitaxy APL Materials, 7(2), [022505]. https://doi.org/10.1063/1.5054289

Thin-film stabilization of LiNbO ₃ -type ZnSnO ₃ and MgSnO ₃ by molecular-beam epitaxy . / Fujiwara, Kohei; Minato, Hiroya; Shiogai, Junichi et al.

In: APL Materials, Vol. 7, No. 2, 022505, 01.02.2019.

Research output: Contribution to journal › Article › peer-review

Fujiwara, K, Minato, H, Shiogai, J, Kumamoto, A, Shibata, N & Tsukazaki, A 2019, ' Thin-film stabilization of LiNbO ₃ -type ZnSnO ₃ and MgSnO ₃ by molecular-beam epitaxy ', APL Materials, vol. 7, no. 2, 022505. https://doi.org/10.1063/1.5054289

Fujiwara K, Minato H, Shiogai J, Kumamoto A, Shibata N, Tsukazaki A. Thin-film stabilization of LiNbO ₃ -type ZnSnO ₃ and MgSnO ₃ by molecular-beam epitaxy APL Materials. 2019 Feb 1;7(2):022505. doi: 10.1063/1.5054289

Fujiwara, Kohei ; Minato, Hiroya ; Shiogai, Junichi et al. / Thin-film stabilization of LiNbO ₃ -type ZnSnO ₃ and MgSnO ₃ by molecular-beam epitaxy In: APL Materials. 2019 ; Vol. 7, No. 2.

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title = " Thin-film stabilization of LiNbO 3 -type ZnSnO 3 and MgSnO 3 by molecular-beam epitaxy ",

abstract = " In polar crystals, cooperative ionic displacement produces a macroscopic spontaneous polarization. Among such polar materials, LiNbO 3 -type wide bandgap oxides are particularly appealing because they offer useful ferroelectric properties and also potentially lead to multiferroic materials. Using molecular-beam epitaxy, we investigated the thin-film growth of high-pressure phase LiNbO 3 -type ZnSnO 3 and discovered a polar oxide candidate, MgSnO 3 . We found that LiNbO 3 -type substrates play an essential role in the crystallization of these compounds, though corundum-type Al 2 O 3 substrates also have the identical crystallographic arrangement of oxygen sublattice. Optical transmittance and electrical transport measurements revealed their potential as a transparent conducting oxide. Establishment of a thin-film synthetic route would be the basis for exploration of functional polar oxides and research on conduction at ferroelectric interfaces and domain walls.",

author = "Kohei Fujiwara and Hiroya Minato and Junichi Shiogai and Akihito Kumamoto and Naoya Shibata and Atsushi Tsukazaki",

note = "Funding Information: The authors thank Y. Inaguma for his insightful advice, T. Matsuoka and S. Kuboya for the use of a spectrophotometer, NEOARK Corporation for the use of a maskless lithography system PALET, and I. Narita, F. Sakamoto, S. Ito, and K. Miura for their experimental assistance. This work was performed under the Inter-University Cooperative Research Program of the Institute for Materials Research, Tohoku University (Proposal Nos. 17G0415 and 17G0417), and also conducted in part at Advanced Characterization Nanotechnology Platform of the University of Tokyo, supported by the “Nanotechnology Platform” of the Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan. This work was supported by JSPS KAKENHI (No. JP15H02022) and Kato Foundation for Promotion of Science (No. KJ-2607). Publisher Copyright: {\textcopyright} 2018 Author(s).",

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AU - Shibata, Naoya

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N2 - In polar crystals, cooperative ionic displacement produces a macroscopic spontaneous polarization. Among such polar materials, LiNbO 3 -type wide bandgap oxides are particularly appealing because they offer useful ferroelectric properties and also potentially lead to multiferroic materials. Using molecular-beam epitaxy, we investigated the thin-film growth of high-pressure phase LiNbO 3 -type ZnSnO 3 and discovered a polar oxide candidate, MgSnO 3 . We found that LiNbO 3 -type substrates play an essential role in the crystallization of these compounds, though corundum-type Al 2 O 3 substrates also have the identical crystallographic arrangement of oxygen sublattice. Optical transmittance and electrical transport measurements revealed their potential as a transparent conducting oxide. Establishment of a thin-film synthetic route would be the basis for exploration of functional polar oxides and research on conduction at ferroelectric interfaces and domain walls.

AB - In polar crystals, cooperative ionic displacement produces a macroscopic spontaneous polarization. Among such polar materials, LiNbO 3 -type wide bandgap oxides are particularly appealing because they offer useful ferroelectric properties and also potentially lead to multiferroic materials. Using molecular-beam epitaxy, we investigated the thin-film growth of high-pressure phase LiNbO 3 -type ZnSnO 3 and discovered a polar oxide candidate, MgSnO 3 . We found that LiNbO 3 -type substrates play an essential role in the crystallization of these compounds, though corundum-type Al 2 O 3 substrates also have the identical crystallographic arrangement of oxygen sublattice. Optical transmittance and electrical transport measurements revealed their potential as a transparent conducting oxide. Establishment of a thin-film synthetic route would be the basis for exploration of functional polar oxides and research on conduction at ferroelectric interfaces and domain walls.

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Thin-film stabilization of LiNbO ₃ -type ZnSnO ₃ and MgSnO ₃ by molecular-beam epitaxy

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