Thin-film stabilization of LiNbO                         3                         -type ZnSnO                         3                          and MgSnO                         3                          by molecular-beam epitaxy

Kohei Fujiwara; Hiroya Minato; Junichi Shiogai; Akihito Kumamoto; Naoya Shibata; Atsushi Tsukazaki

doi:10.1063/1.5054289

Thin-film stabilization of LiNbO ₃ -type ZnSnO ₃ and MgSnO ₃ by molecular-beam epitaxy

Kohei Fujiwara, Hiroya Minato, Junichi Shiogai, Akihito Kumamoto, Naoya Shibata, Atsushi Tsukazaki

Materials Property Division

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

In polar crystals, cooperative ionic displacement produces a macroscopic spontaneous polarization. Among such polar materials, LiNbO ₃ -type wide bandgap oxides are particularly appealing because they offer useful ferroelectric properties and also potentially lead to multiferroic materials. Using molecular-beam epitaxy, we investigated the thin-film growth of high-pressure phase LiNbO ₃ -type ZnSnO ₃ and discovered a polar oxide candidate, MgSnO ₃ . We found that LiNbO ₃ -type substrates play an essential role in the crystallization of these compounds, though corundum-type Al ₂ O ₃ substrates also have the identical crystallographic arrangement of oxygen sublattice. Optical transmittance and electrical transport measurements revealed their potential as a transparent conducting oxide. Establishment of a thin-film synthetic route would be the basis for exploration of functional polar oxides and research on conduction at ferroelectric interfaces and domain walls.

Original language	English
Article number	022505
Journal	APL Materials
Volume	7
Issue number	2
DOIs	https://doi.org/10.1063/1.5054289
Publication status	Published - 2019 Feb 1

ASJC Scopus subject areas

Materials Science(all)
Engineering(all)

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Fujiwara, K., Minato, H., Shiogai, J., Kumamoto, A., Shibata, N., & Tsukazaki, A. (2019). Thin-film stabilization of LiNbO ₃ -type ZnSnO ₃ and MgSnO ₃ by molecular-beam epitaxy APL Materials, 7(2), [022505]. https://doi.org/10.1063/1.5054289

Thin-film stabilization of LiNbO ₃ -type ZnSnO ₃ and MgSnO ₃ by molecular-beam epitaxy . / Fujiwara, Kohei; Minato, Hiroya; Shiogai, Junichi; Kumamoto, Akihito; Shibata, Naoya; Tsukazaki, Atsushi.

In: APL Materials, Vol. 7, No. 2, 022505, 01.02.2019.

Research output: Contribution to journal › Article › peer-review

Fujiwara, K, Minato, H, Shiogai, J, Kumamoto, A, Shibata, N & Tsukazaki, A 2019, ' Thin-film stabilization of LiNbO ₃ -type ZnSnO ₃ and MgSnO ₃ by molecular-beam epitaxy ', APL Materials, vol. 7, no. 2, 022505. https://doi.org/10.1063/1.5054289

Fujiwara K, Minato H, Shiogai J, Kumamoto A, Shibata N, Tsukazaki A. Thin-film stabilization of LiNbO ₃ -type ZnSnO ₃ and MgSnO ₃ by molecular-beam epitaxy APL Materials. 2019 Feb 1;7(2). 022505. https://doi.org/10.1063/1.5054289

Fujiwara, Kohei ; Minato, Hiroya ; Shiogai, Junichi ; Kumamoto, Akihito ; Shibata, Naoya ; Tsukazaki, Atsushi. / Thin-film stabilization of LiNbO ₃ -type ZnSnO ₃ and MgSnO ₃ by molecular-beam epitaxy In: APL Materials. 2019 ; Vol. 7, No. 2.

@article{c9469d88d5e44156872c63bd8cd63a94,

title = " Thin-film stabilization of LiNbO 3 -type ZnSnO 3 and MgSnO 3 by molecular-beam epitaxy ",

abstract = " In polar crystals, cooperative ionic displacement produces a macroscopic spontaneous polarization. Among such polar materials, LiNbO 3 -type wide bandgap oxides are particularly appealing because they offer useful ferroelectric properties and also potentially lead to multiferroic materials. Using molecular-beam epitaxy, we investigated the thin-film growth of high-pressure phase LiNbO 3 -type ZnSnO 3 and discovered a polar oxide candidate, MgSnO 3 . We found that LiNbO 3 -type substrates play an essential role in the crystallization of these compounds, though corundum-type Al 2 O 3 substrates also have the identical crystallographic arrangement of oxygen sublattice. Optical transmittance and electrical transport measurements revealed their potential as a transparent conducting oxide. Establishment of a thin-film synthetic route would be the basis for exploration of functional polar oxides and research on conduction at ferroelectric interfaces and domain walls. ",

author = "Kohei Fujiwara and Hiroya Minato and Junichi Shiogai and Akihito Kumamoto and Naoya Shibata and Atsushi Tsukazaki",

year = "2019",

month = feb,

day = "1",

doi = "10.1063/1.5054289",

language = "English",

volume = "7",

journal = "APL Materials",

issn = "2166-532X",

publisher = "American Institute of Physics Publising LLC",

number = "2",

}

TY - JOUR

T1 - Thin-film stabilization of LiNbO 3 -type ZnSnO 3 and MgSnO 3 by molecular-beam epitaxy

AU - Fujiwara, Kohei

AU - Minato, Hiroya

AU - Shiogai, Junichi

AU - Kumamoto, Akihito

AU - Shibata, Naoya

AU - Tsukazaki, Atsushi

PY - 2019/2/1

Y1 - 2019/2/1

N2 - In polar crystals, cooperative ionic displacement produces a macroscopic spontaneous polarization. Among such polar materials, LiNbO 3 -type wide bandgap oxides are particularly appealing because they offer useful ferroelectric properties and also potentially lead to multiferroic materials. Using molecular-beam epitaxy, we investigated the thin-film growth of high-pressure phase LiNbO 3 -type ZnSnO 3 and discovered a polar oxide candidate, MgSnO 3 . We found that LiNbO 3 -type substrates play an essential role in the crystallization of these compounds, though corundum-type Al 2 O 3 substrates also have the identical crystallographic arrangement of oxygen sublattice. Optical transmittance and electrical transport measurements revealed their potential as a transparent conducting oxide. Establishment of a thin-film synthetic route would be the basis for exploration of functional polar oxides and research on conduction at ferroelectric interfaces and domain walls.

AB - In polar crystals, cooperative ionic displacement produces a macroscopic spontaneous polarization. Among such polar materials, LiNbO 3 -type wide bandgap oxides are particularly appealing because they offer useful ferroelectric properties and also potentially lead to multiferroic materials. Using molecular-beam epitaxy, we investigated the thin-film growth of high-pressure phase LiNbO 3 -type ZnSnO 3 and discovered a polar oxide candidate, MgSnO 3 . We found that LiNbO 3 -type substrates play an essential role in the crystallization of these compounds, though corundum-type Al 2 O 3 substrates also have the identical crystallographic arrangement of oxygen sublattice. Optical transmittance and electrical transport measurements revealed their potential as a transparent conducting oxide. Establishment of a thin-film synthetic route would be the basis for exploration of functional polar oxides and research on conduction at ferroelectric interfaces and domain walls.

UR - http://www.scopus.com/inward/record.url?scp=85058450049&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85058450049&partnerID=8YFLogxK

U2 - 10.1063/1.5054289

DO - 10.1063/1.5054289

M3 - Article

AN - SCOPUS:85058450049

VL - 7

JO - APL Materials

JF - APL Materials

SN - 2166-532X

IS - 2

M1 - 022505

ER -