TY - JOUR
T1 - Thin-film growth of (110) rutile TiO2 on (100) Ge substrate by pulsed laser deposition
AU - Suzuki, Yoshihisa
AU - Nagata, Takahiro
AU - Yamashita, Yoshiyuki
AU - Nabatame, Toshihide
AU - Ogura, Atsushi
AU - Chikyow, Toyohiro
PY - 2016/6
Y1 - 2016/6
N2 - The deposition conditions of (100) rutile TiO2 grown on p-type (100) Ge substrates by pulsed laser deposition (PLD) were optimized to improve the electrical properties of the TiO2/Ge structure. Increasing the substrate temperature (Tsub) enhanced the grain growth, the surface roughness of the film, and Ge diffusion into the TiO2 layer. The growth rate, which was controlled by the laser density in PLD (Ld), affected the Ge diffusion. Ld of 0.35 J/cm2 (0.37 nm/min) enhanced the Ge diffusion and improved the crystallinity and surface roughness at a temperature of 450 °C, at which GeOx undergoes decomposition and desorption. However, the Ge diffusion into TiO2 degraded the electrical properties. By using the optimized conditions (Ld = 0.7 J/cm2 and Tsub = 420 °C) with postannealing, the TiO2/Ge structure showed an improvement in the leakage current of 3 orders of magnitude and the capacitance-voltage property characteristics indicated the formation of a p-n junction.
AB - The deposition conditions of (100) rutile TiO2 grown on p-type (100) Ge substrates by pulsed laser deposition (PLD) were optimized to improve the electrical properties of the TiO2/Ge structure. Increasing the substrate temperature (Tsub) enhanced the grain growth, the surface roughness of the film, and Ge diffusion into the TiO2 layer. The growth rate, which was controlled by the laser density in PLD (Ld), affected the Ge diffusion. Ld of 0.35 J/cm2 (0.37 nm/min) enhanced the Ge diffusion and improved the crystallinity and surface roughness at a temperature of 450 °C, at which GeOx undergoes decomposition and desorption. However, the Ge diffusion into TiO2 degraded the electrical properties. By using the optimized conditions (Ld = 0.7 J/cm2 and Tsub = 420 °C) with postannealing, the TiO2/Ge structure showed an improvement in the leakage current of 3 orders of magnitude and the capacitance-voltage property characteristics indicated the formation of a p-n junction.
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U2 - 10.7567/JJAP.55.06GG06
DO - 10.7567/JJAP.55.06GG06
M3 - Article
AN - SCOPUS:84974621100
VL - 55
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 6
M1 - 06GG06
ER -