Thin film field-effect phototransistors from bandgap-tunable, solution-processed, few-layer reduced graphene oxide films

Haixin Chang, Zhenhua Sun, Qinghong Yuan, Feng Ding, Xiaoming Tao, Feng Yan, Zijian Zheng

    Research output: Contribution to journalArticlepeer-review

    145 Citations (Scopus)

    Abstract

    Thin film field-effect phototransistors (FETs) can be developed from bandgap-tunable, solution-processed, few-layer reduced graphene oxide (FRGO) films. Large-area FRGO films with tunable bandgaps ranging from 2.2 eV to 0.5 eV can be achieved readily by solution-processing technique such as spin-coating. The electronic and optoelectronic properties of FRGO FETs are found to be closely related to their bandgap energy. The resulting phototransistor has great application potential in the field of photodetection.

    Original languageEnglish
    Pages (from-to)4872-4876
    Number of pages5
    JournalAdvanced Materials
    Volume22
    Issue number43
    DOIs
    Publication statusPublished - 2010 Nov 16

    Keywords

    • bandgap
    • field-effect
    • graphene
    • phototransistor
    • solution processable

    ASJC Scopus subject areas

    • Materials Science(all)
    • Mechanics of Materials
    • Mechanical Engineering

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