Thin beam bulk micromachining based on RIE and xenon difluoride silicon etching

Risaku Toda, Kazuyuki Minami, Masayoshi Esashi

Research output: Contribution to conferencePaperpeer-review

18 Citations (Scopus)

Abstract

A new process for fabricating thin mechanical beam structures from single crystal silicon is developed. Lateral and vertical dimensions of the beam can be precisely defined. The beam is positioned in the middle of a silicon wafer at exactly equal distances from both sides. The beam design is not limited by crystal orientations of silicon. The silicon beam structure is essentially stress-free because the whole structure is made of uniformly doped single crystal silicon. This thin beam process offers significantly expanded design freedom to bulk silicon micromachining. Additionally, very high aspect ratio silicon dioxide structure is fabricated with a similar technique.

Original languageEnglish
Pages671-674
Number of pages4
Publication statusPublished - 1997 Jan 1
EventProceedings of the 1997 International Conference on Solid-State Sensors and Actuators. Part 1 (of 2) - Chicago, IL, USA
Duration: 1997 Jun 161997 Jun 19

Other

OtherProceedings of the 1997 International Conference on Solid-State Sensors and Actuators. Part 1 (of 2)
CityChicago, IL, USA
Period97/6/1697/6/19

ASJC Scopus subject areas

  • Engineering(all)

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