Thickness scaling effect on interfacial barrier and electrical contact to two-dimensional MoS2 layers

Song Lin Li, Katsuyoshi Komatsu, Shu Nakaharai, Yen Fu Lin, Mahito Yamamoto, Xiangfeng Duan, Kazuhito Tsukagoshi

Research output: Contribution to journalArticlepeer-review

104 Citations (Scopus)

Abstract

Understanding the interfacial electrical properties between metallic electrodes and low-dimensional semiconductors is essential for both fundamental science and practical applications. Here we report the observation of thickness reduction induced crossover of electrical contact at Au/MoS2 interfaces. For MoS2 thicker than 5 layers, the contact resistivity slightly decreases with reducing MoS2 thickness. By contrast, the contact resistivity sharply increases with reducing MoS2 thickness below 5 layers, mainly governed by the quantum confinement effect. We find that the interfacial potential barrier can be finely tailored from 0.3 to 0.6 eV by merely varying MoS2 thickness. A full evolution diagram of energy level alignment is also drawn to elucidate the thickness scaling effect. The finding of tailoring interfacial properties with channel thickness represents a useful approach controlling the metal/semiconductor interfaces which may result in conceptually innovative functionalities.

Original languageEnglish
Pages (from-to)12836-12842
Number of pages7
JournalACS Nano
Volume8
Issue number12
DOIs
Publication statusPublished - 2014 Dec 23
Externally publishedYes

Keywords

  • Schottky barrier
  • chalcogenide
  • electrical contact
  • field-effect transistor
  • quantum confinement
  • two-dimensional material

ASJC Scopus subject areas

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

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