Abstract
Understanding the interfacial electrical properties between metallic electrodes and low-dimensional semiconductors is essential for both fundamental science and practical applications. Here we report the observation of thickness reduction induced crossover of electrical contact at Au/MoS2 interfaces. For MoS2 thicker than 5 layers, the contact resistivity slightly decreases with reducing MoS2 thickness. By contrast, the contact resistivity sharply increases with reducing MoS2 thickness below 5 layers, mainly governed by the quantum confinement effect. We find that the interfacial potential barrier can be finely tailored from 0.3 to 0.6 eV by merely varying MoS2 thickness. A full evolution diagram of energy level alignment is also drawn to elucidate the thickness scaling effect. The finding of tailoring interfacial properties with channel thickness represents a useful approach controlling the metal/semiconductor interfaces which may result in conceptually innovative functionalities.
Original language | English |
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Pages (from-to) | 12836-12842 |
Number of pages | 7 |
Journal | ACS Nano |
Volume | 8 |
Issue number | 12 |
DOIs | |
Publication status | Published - 2014 Dec 23 |
Externally published | Yes |
Keywords
- chalcogenide
- electrical contact
- field-effect transistor
- quantum confinement
- Schottky barrier
- two-dimensional material
ASJC Scopus subject areas
- Materials Science(all)
- Engineering(all)
- Physics and Astronomy(all)