Thickness measurement of amorphous SiO2 by EELS and electron holography

Chang Woo Lee, Yoichi Ikematsu, Daisuke Shindo

    Research output: Contribution to journalArticlepeer-review

    5 Citations (Scopus)

    Abstract

    The accuracy of electron energy-loss spectroscopy (EELS) and electron holography on thickness measurement of amorphous SiO2 was discussed. Since the SiO2 particles investigated in this work have a spherical shape, local thickness along the incident electron beam can easily be evaluated. Thus, from EELS, the mean free path of inelastic scattering was determined to be 178±4 nm at 200 kV. It is considered that thickness measurement is limited to amorphous SiO2 film thicker than about 20 nm with EELS. On the other hand, from phase shift in the electron hologram, the mean inner potential was evaluated to be 11.5±0.3 V. It is suggested that the thickness measurement is possible up to a few nanometers with electron holography. Thus, it is pointed out that the accurate thickness measurement is possible for a thinner region with electron holography than EELS.

    Original languageEnglish
    Pages (from-to)1129-1131
    Number of pages3
    JournalMaterials Transactions, JIM
    Volume41
    Issue number9
    DOIs
    Publication statusPublished - 2000 Sep

    ASJC Scopus subject areas

    • Engineering(all)

    Fingerprint

    Dive into the research topics of 'Thickness measurement of amorphous SiO<sub>2</sub> by EELS and electron holography'. Together they form a unique fingerprint.

    Cite this