THICKNESS DISTRIBUTION IN THIN FILM STUDIED BY X-RAY EXCITED PHOTOELECTRON SPECTROSCOPY.

Takeo Hattori

    Research output: Chapter in Book/Report/Conference proceedingChapter

    4 Citations (Scopus)

    Abstract

    The thickness distribution in RF diode sputtered ultra thin silicon dioxide films were measured. According to the measurements, the thickness distribution in silicon dioxide film is found to be more uniform as compared with that obtained for RF diode sputtered ultra thin platinum film having the almost same thickness as that of silicon dioxide film. The existence of pinholes was detected down to 0. 24% for the total are of nearly 2. 5 mm**2.

    Original languageEnglish
    Title of host publicationUnknown Host Publication Title
    PublisherInt Union for Vac Sci, Tech and Appl
    Pages2157-2160
    Number of pages4
    Volume3
    Publication statusPublished - 1977
    EventProc of the Int Vac Congr, 7th, and the Int Conf on Solid Surf, 3rd, of the Int Union for Vac Sci, Tech and Appl - Vienna, Austria
    Duration: 1977 Sep 121977 Sep 16

    Other

    OtherProc of the Int Vac Congr, 7th, and the Int Conf on Solid Surf, 3rd, of the Int Union for Vac Sci, Tech and Appl
    CityVienna, Austria
    Period77/9/1277/9/16

    ASJC Scopus subject areas

    • Engineering(all)

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