Abstract
The thickness distribution in RF diode sputtered ultra thin silicon dioxide films were measured. According to the measurements, the thickness distribution in silicon dioxide film is found to be more uniform as compared with that obtained for RF diode sputtered ultra thin platinum film having the almost same thickness as that of silicon dioxide film. The existence of pinholes was detected down to 0. 24% for the total are of nearly 2. 5 mm**2.
| Original language | English |
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| Title of host publication | Unknown Host Publication Title |
| Publisher | Int Union for Vac Sci, Tech and Appl |
| Pages | 2157-2160 |
| Number of pages | 4 |
| Volume | 3 |
| Publication status | Published - 1977 |
| Event | Proc of the Int Vac Congr, 7th, and the Int Conf on Solid Surf, 3rd, of the Int Union for Vac Sci, Tech and Appl - Vienna, Austria Duration: 1977 Sept 12 → 1977 Sept 16 |
Other
| Other | Proc of the Int Vac Congr, 7th, and the Int Conf on Solid Surf, 3rd, of the Int Union for Vac Sci, Tech and Appl |
|---|---|
| City | Vienna, Austria |
| Period | 77/9/12 → 77/9/16 |
ASJC Scopus subject areas
- Engineering(all)