TY - JOUR
T1 - Thickness-dependent physical properties of La1/3Sr2/3FeO3 thin films grown on SrTiO3 (001) and (111) substrates
AU - Minohara, Makoto
AU - Kitamura, Miho
AU - Wadati, Hiroki
AU - Nakao, Hironori
AU - Kumai, Reiji
AU - Murakami, Youichi
AU - Kumigashira, Hiroshi
N1 - Funding Information:
We thank Hiroyuki Yamada for experimental support on x-ray diffraction measurements, and Mio Horiguchi for her technical support. This work was supported by a Grant-in-Aid for Scientific Research (No. B25287095, 15H02109, and 16H02115) and a Grant-in-Aid for Young Scientists (No. 15K17470) from the Japan Society for the Promotion of Science (JSPS) as well as the MEXT Elements Strategy Initiative to Form Core Research Center. M.K. acknowledges the financial support from JSPS for Young Scientists. The work at KEK-PF was performed under the approval of the Program Advisory Committee (Proposals No. 2014G009, 2013S2-002, and 2015S2-005) at the Institute of Materials Structure Science, KEK.
Publisher Copyright:
© 2016 Author(s).
PY - 2016/7/14
Y1 - 2016/7/14
N2 - We have investigated the thickness-dependent transport properties of La1/3Sr2/3FeO3 thin films grown on SrTiO3 (001) and (111) substrates. At a thickness of ∼40 nm, both films show a clear transition in resistivity associated with the characteristic charge disproportionation at approximately 190 K. The transition temperature of the charge disproportionation is nearly unchanged with decreasing film thickness down to a certain thickness of ∼13 nm for both orientations, while the change in resistivity gradually decreases. Below this thickness, the transition becomes unclear, strongly suggesting the suppression of the charge disproportionation at the critical thickness of ∼13 nm. Furthermore, there is no significant difference in the thickness dependence of La1/3Sr2/3FeO3 thin films between the (001) and (111) orientations. The negligible crystallographic-orientation dependence may reflect the isotropic nature for the domain of charge disproportionation states in La1/3Sr2/3FeO3.
AB - We have investigated the thickness-dependent transport properties of La1/3Sr2/3FeO3 thin films grown on SrTiO3 (001) and (111) substrates. At a thickness of ∼40 nm, both films show a clear transition in resistivity associated with the characteristic charge disproportionation at approximately 190 K. The transition temperature of the charge disproportionation is nearly unchanged with decreasing film thickness down to a certain thickness of ∼13 nm for both orientations, while the change in resistivity gradually decreases. Below this thickness, the transition becomes unclear, strongly suggesting the suppression of the charge disproportionation at the critical thickness of ∼13 nm. Furthermore, there is no significant difference in the thickness dependence of La1/3Sr2/3FeO3 thin films between the (001) and (111) orientations. The negligible crystallographic-orientation dependence may reflect the isotropic nature for the domain of charge disproportionation states in La1/3Sr2/3FeO3.
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U2 - 10.1063/1.4958670
DO - 10.1063/1.4958670
M3 - Article
AN - SCOPUS:84978524069
VL - 120
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 2
M1 - 025303
ER -