Abstract
Using electron diffraction methods, we have studied the amorphous to crystalline phase transition of quench condensed bismuth films on three semiconducting surfaces: Si(111)-β - Bi, Si(111)-7 × 7, and Si(111) - In. Using reflection high energy electron diffraction (RHEED), we monitored the film growth in real-time, and observed a thickness dependent amorphous to crystalline phase transition. For the same growth conditions, we found a substrate dependent crystallisation thickness: 4 ML on Si(111)-β - Bi, and 8 ML on both the Si(111)-7 × 7 and the Si(111) - In surfaces. We interpret these results in terms of the free energies of crystalline Bi thin films, and hypothesise that the differing thickness results from a lowering of the free energy of crystalline Bi films on the Si(111)-β - Bi surface, with respect to the Si(111)-7 × 7 and the Si(111) - In surfaces.
Original language | English |
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Pages (from-to) | 4604-4610 |
Number of pages | 7 |
Journal | CrystEngComm |
Volume | 13 |
Issue number | 14 |
DOIs | |
Publication status | Published - 2011 Jul 21 |
ASJC Scopus subject areas
- Chemistry(all)
- Materials Science(all)
- Condensed Matter Physics