Thickness dependent phase transition of Bi films quench condensed on semiconducting surfaces

D. N. McCarthy, S. Yaginuma, H. Gui, T. Nagao

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    5 Citations (Scopus)

    Abstract

    Using electron diffraction methods, we have studied the amorphous to crystalline phase transition of quench condensed bismuth films on three semiconducting surfaces: Si(111)-β - Bi, Si(111)-7 × 7, and Si(111) - In. Using reflection high energy electron diffraction (RHEED), we monitored the film growth in real-time, and observed a thickness dependent amorphous to crystalline phase transition. For the same growth conditions, we found a substrate dependent crystallisation thickness: 4 ML on Si(111)-β - Bi, and 8 ML on both the Si(111)-7 × 7 and the Si(111) - In surfaces. We interpret these results in terms of the free energies of crystalline Bi thin films, and hypothesise that the differing thickness results from a lowering of the free energy of crystalline Bi films on the Si(111)-β - Bi surface, with respect to the Si(111)-7 × 7 and the Si(111) - In surfaces.

    Original languageEnglish
    Pages (from-to)4604-4610
    Number of pages7
    JournalCrystEngComm
    Volume13
    Issue number14
    DOIs
    Publication statusPublished - 2011 Jul 21

    ASJC Scopus subject areas

    • Chemistry(all)
    • Materials Science(all)
    • Condensed Matter Physics

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