Thickness dependent electrical characteristics of AlGaN/GaN MOSHEMT with La2O3 gate dielectrics

J. Chen, K. Tsuneishi, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, H. Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Engineering & Materials Science