Thickness dependent electrical characteristics of AlGaN/GaN MOSHEMT with La2O3 gate dielectrics

J. Chen, K. Tsuneishi, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, H. Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Thickness dependence of La2O3 gate dielectrics on electrical characteristics for AlGaN/GaN MOSHFET has been investigated. Positive shift in threshold voltage has been observed with thicker La2O 3 film thickness. Reduction in leakage current has obtained with thicker film.

Original languageEnglish
Title of host publicationGallium Nitride and Silicon Carbide Power Technologies 2
Pages353-357
Number of pages5
Edition3
DOIs
Publication statusPublished - 2012
Externally publishedYes
Event2nd Symposium on Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Technologies - ECS Fall 2012 Meeting - Honolulu, HI, United States
Duration: 2012 Oct 72012 Oct 12

Publication series

NameECS Transactions
Number3
Volume50
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other2nd Symposium on Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Technologies - ECS Fall 2012 Meeting
CountryUnited States
CityHonolulu, HI
Period12/10/712/10/12

ASJC Scopus subject areas

  • Engineering(all)

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    Chen, J., Tsuneishi, K., Kakushima, K., Ahmet, P., Kataoka, Y., Nishiyama, A., Sugii, N., Tsutsui, K., Natori, K., Hattori, T., & Iwai, H. (2012). Thickness dependent electrical characteristics of AlGaN/GaN MOSHEMT with La2O3 gate dielectrics. In Gallium Nitride and Silicon Carbide Power Technologies 2 (3 ed., pp. 353-357). (ECS Transactions; Vol. 50, No. 3). https://doi.org/10.1149/05003.0353ecst