Thickness dependence of resistivity for Cu films deposited by ion beam deposition

J. W. Lim, K. Mimura, M. Isshiki

Research output: Contribution to journalArticle

72 Citations (Scopus)

Abstract

The thickness dependence of the resistivity for Cu films deposited by ion beam deposition (IBD) was evaluated using Fuchs-Sondheimer (F-S) model for electron surface scattering and Mayadas-Shatzkes (M-S) model for electron grain boundary scattering. For fitting the F-S and M-S models to the experimental data, the approximate equations proposed in both models were discussed and it was confirmed that the experimental resistivity of the Cu films could be described well by a simple form combined of the approximate equations for both models. By means of the simple form in this work, the most reasonable fit to the experimental data could be obtained under the conditions of the surface scattering coefficient p = 0 and the reflection coefficient at grain boundary R = 0.40.

Original languageEnglish
Pages (from-to)95-99
Number of pages5
JournalApplied Surface Science
Volume217
Issue number1-4
DOIs
Publication statusPublished - 2003 Jul 15

Keywords

  • Copper
  • Ion beam
  • Resistivity
  • Thickness
  • Thin films

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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